PD85025S-E STMicroelectronics, PD85025S-E Datasheet - Page 7

• Manufacturer Part Number: PD85025S-E
• Description: TRANS RF POWER LDMOST N-CH
• Manufacturer: STMicroelectronics

Specifications of PD85025S-E

• Transistor Type: LDMOS
• Frequency: 870MHz
• Gain: 17.3dB
• Voltage - Rated: 40V
• Current Rating: 7A
• Current - Test: 300mA
• Voltage - Test: 13.6V
• Power - Output: 10W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 7A
• Drain Source Voltage (max): 40V
• Output Power (max): 30W(Typ)
• Power Gain (typ)@vds: 17.3dB
• Frequency (max): 1GHz
• Package Type: Power SO-10RF
• Pin Count: 2
• Input Capacitance (typ)@vds: 55@12.5VpF
• Output Capacitance (typ)@vds: 40@12.5VpF
• Reverse Capacitance (typ): 1.5@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 66%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 79000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-8298; 497-8298-5; 497-8298; PD85025S-E

PD85025-E
Figure 6.
Figure 8.
40
35
30
25
20
15
10
5
0
6
4
3
2
0
5
1
0.0
0
DC output characteristics
Ouptut power and efficiency vs
Input power
2
0.5
Freq = 870 MHz
Vgs = 4.0V
Vgs = 5.0V
Vgs = 6.0V
Idq = 300 mA
Vdd = 13.6V
Input power (W)
4
1.0
V D S[ V ]
6
1.5
Tamb = + 60 °C
8
Pout
Vgs = 4.5V
Vgs = 5.5V
2.0
10
Eff
Doc ID 13593 Rev 3
2.5
12
80
70
60
50
40
30
20
10
0
Figure 7.
Figure 9.
32
28
24
20
16
12
20
19
18
17
16
15
14
13
12
11
10
8
4
0
0
0
Freq = 870 MHz
Idq = 300mA
Pin = 0.4W
5
1
Gain vs output power and
Bias current
Output power and drain current vs
Gate voltage
Idq = 100mA
Freq = 870 MHz
10
Vdd = 13.6V
2
Output power (W)
Input power (W)
Vgs (V)
15
3
Idq = 200mA
Typical performance
20
4
Pout
25
Idq = 300mA
5
Id
30
6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
35
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