PD57006-E STMicroelectronics, PD57006-E Datasheet - Page 11

• Manufacturer Part Number: PD57006-E
• Description: IC TRANS RF PWR LDMOST PWRSO-10
• Manufacturer: STMicroelectronics

Specifications of PD57006-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 15dB
• Voltage - Rated: 65V
• Current Rating: 1A
• Current - Test: 70mA
• Voltage - Test: 28V
• Power - Output: 6W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 165 C
• Forward Transconductance Gfs (max / Min): 0.58 S
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Continuous Drain Current Id: 1A
• Drain Source Voltage Vds: 65V
• Threshold Voltage Vgs Typ: 5V
• Transistor Case Style: PowerSO-10RF
• No. Of Pins: 3
• Svhc: No SVHC (15-Dec-2010)
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-6719-5; PD57006-E

PD57006-E
Figure 21. Output power vs supply voltage
Figure 23. Output power vs
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gate-source voltage
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VGS, GATE-SOURCE VOLTAGE (V)
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VDD, SUPPLY VOLTAGE (V)
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945 M H z
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945 M H z
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925 M H z
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925 M H z
V dd=28V
P in= 22.7 dB m
Id q = 70 m A
P in = 22.7 d B m
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960 M H z
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960 M H z
Doc ID 12611 Rev 3
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Figure 22. Drain efficiency vs supply voltage
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960 M H z
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VDD, SUPPLY VOLTAGE (V)
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945 M H z
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Typical performance
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925 M H z
Idq=70 m A
P in = 22.7 dB m
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