PD20010S-E STMicroelectronics, PD20010S-E Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/6/637/stmicroelectronics_sml.jpg)
PD20010S-E
Manufacturer Part Number
PD20010S-E
Description
TRANS RF N-CH FET POWERSO-10RF
Manufacturer
STMicroelectronics
Datasheet
1.PD20010STR-E.pdf
(12 pages)
Specifications of PD20010S-E
Transistor Type
LDMOS
Frequency
2GHz
Gain
11dB
Voltage - Rated
40V
Current Rating
5A
Current - Test
150mA
Voltage - Test
13.6V
Power - Output
10W
Package / Case
PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
5A
Drain Source Voltage (max)
40V
Output Power (max)
15W(Typ)
Power Gain (typ)@vds
11dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Straight lead)
Pin Count
4
Input Capacitance (typ)@vds
45@12.5VpF
Output Capacitance (typ)@vds
36@12.5VpF
Reverse Capacitance (typ)
1.2@12.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
53%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
59000mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
3
Typical performance
Figure 2.
Figure 4.
90
80
70
60
50
40
30
20
10
0
0
5
Drain current vs. gate voltage Figure 3.
Capacitances vs. drain
voltage
Coss
10
Drain voltage (V)
15
Crss
20
Ciss
25
30
DC output characteristics
5/12