PD55003-E STMicroelectronics, PD55003-E Datasheet - Page 15
![TRANS RF N-CH FET LDMOST PWRSO10](/photos/5/63/56397/pd55003-e_sml.jpg)
PD55003-E
Manufacturer Part Number
PD55003-E
Description
TRANS RF N-CH FET LDMOST PWRSO10
Manufacturer
STMicroelectronics
Datasheet
1.PD55003-E.pdf
(29 pages)
Specifications of PD55003-E
Transistor Type
LDMOS
Frequency
500MHz
Gain
17dB
Voltage - Rated
40V
Current Rating
2.5A
Current - Test
50mA
Voltage - Test
12.5V
Power - Output
3W
Package / Case
PowerSO-10 Exposed Bottom Pad
Configuration
Single
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.5 A
Power Dissipation
31.7 W
Maximum Operating Temperature
+ 165 C
Forward Transconductance Gfs (max / Min)
1 S
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
40V
Output Power (max)
3W(Min)
Power Gain (typ)@vds
17dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Formed lead)
Pin Count
4
Forward Transconductance (typ)
1S
Input Capacitance (typ)@vds
36@12.5VpF
Output Capacitance (typ)@vds
24@12.5VpF
Reverse Capacitance (typ)
2.4@12.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
52%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
31700mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-5297-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PD55003-E
Manufacturer:
STM
Quantity:
218
Part Number:
PD55003-E
Manufacturer:
ST
Quantity:
20 000
PD55003-E, PD55003S-E
7
Circuit layout
Figure 31. Test fixture component layout
Figure 32. Test circuit photomaster
Doc ID 12273 Rev 3
6.4 inches
Circuit layout
15/29