BLF872,112 NXP Semiconductors, BLF872,112 Datasheet - Page 12

• Manufacturer Part Number: BLF872,112
• Description: TRANSISTOR RF LDMOS SOT800
• Manufacturer: NXP Semiconductors

Specifications of BLF872,112

• Package / Case: SOT800
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 2.2µA
• Current - Test: 900mA
• Voltage - Test: 32V
• Power - Output: 300W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 13 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2408; 934058888112; BLF872; BLF872

Fig 12. Component layout for class-AB broadband test circuit
C28
C29
C25
C26
C27
R2
R1
R3
R4
L13
L13
C24
C32
C31
C30
B2
BLF872 input
broadband
R5
R6
+V
+V
G2(test)
G1(test)
L12
L12
10 mm
C23
C22
L11
L11
C21
L10
L10
C20
BLF872
15 mm
15 mm
L5
L5
C1
1.5 mm
L1
L1
C2
32 mm
32 mm
13.1 mm
L2
L2
C3
C4
C10
C9
C5
3.5 mm
L3
L3
L6
L6
C6
C7
C14
C11
C12
C13
C15
C16
+V
+V
D2(test)
D1(test)
B1
strip
(+32 V supply)
L4
C8
C17
C18
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