BLF147,112 NXP Semiconductors, BLF147,112 Datasheet - Page 6

• Manufacturer Part Number: BLF147,112
• Description: TRANSISTOR RF DMOS SOT121B
• Manufacturer: NXP Semiconductors

Specifications of BLF147,112

• Package / Case: SOT-121B
• Transistor Type: N-Channel
• Frequency: 108MHz
• Gain: 14dB
• Voltage - Rated: 65V
• Current Rating: 25A
• Voltage - Test: 28V
• Power - Output: 150W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.15 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 220000 mW
• Maximum Operating Temperature: + 200 C
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 150W
• Power Gain (typ)@vds: 19@28VdB
• Frequency (max): 108MHz
• Package Type: CRFM
• Pin Count: 4
• Forward Transconductance (typ): 7.5S
• Drain Source Resistance (max): 150@10Vmohm
• Input Capacitance (typ)@vds: 450@28VpF
• Output Capacitance (typ)@vds: 360@28VpF
• Reverse Capacitance (typ): 55@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 40%
• Mounting: Screw
• Mode Of Operation: SSB Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 220000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2385; 933930000112; BLF147; BLF147

NXP Semiconductors
APPLICATION INFORMATION FOR CLASS-AB OPERATION
RF performance in SSB operation in a common source class-AB circuit.
T
Notes
1. Optimum load impedance: 2.1 + j0 .
2. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
Ruggedness in class-AB operation
The BLF147 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the
following conditions: V
handbook, halfpage
20 to 150 (PEP)
h
VHF power MOS transistor
= 25 C; R
V
Fig.8
power the values should be decreased by 6 dB.
(pF)
GS
C rs
500
400
300
200
100
= 0; f = 1 MHz.
0
(W)
P
0
L
Feedback capacitance as a function of
drain-source voltage; typical values.
th mb-h
10
= 0.2 K/W; R
DS
(MHz)
= 28 V; f = 28 MHz at rated load power.
28
f
20
GS
= 9.8
30
V
V DS (V)
(V)
28
DS
MRA902
f
1
= 28.000 MHz; f
40
Rev. 06 - 5 December 2006
I
(A)
DQ
1
2
= 28.001 MHz; unless otherwise specified.
typ. 19
(dB)
G
17
p
typ. 40
(%)
35
D
(note 2)
typ. 34
(dB)
d
Product specification
30
3
BLF147
6 of 15
(note 2)
typ. 40
(dB)
d
30
5