BLF6G20LS-140,112 NXP Semiconductors, BLF6G20LS-140,112 Datasheet - Page 63
![IC BASESTATION FINAL SOT896B](/photos/5/63/56376/568-2-ldmost_sot-502b_sml.jpg)
BLF6G20LS-140,112
Manufacturer Part Number
BLF6G20LS-140,112
Description
IC BASESTATION FINAL SOT896B
Manufacturer
NXP Semiconductors
Datasheets
1.BLF6G20LS-140118.pdf
(100 pages)
2.BLF6G20LS-140112.pdf
(110 pages)
3.BLF6G20LS-140112.pdf
(8 pages)
Specifications of BLF6G20LS-140,112
Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
1.93GHz
Gain
16.5dB
Voltage - Rated
65V
Current Rating
39A
Current - Test
1A
Voltage - Test
28V
Power - Output
35.5W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
13 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4419
934060897112
BLF6G20LS-140
BLF6G20LS-140
934060897112
BLF6G20LS-140
BLF6G20LS-140
N-channel, dual-gate MOSFETs for switching (continued)
(2)
(3)
(4)
These are NXP preferred types only. For a complete overview of our portfolio please visit: www.nxp.com/fets
(1)
Product
BF1203
BF1204
BF1205C
BF1205
BF1206
BF1207
BF1208
BF1210
BF1211
BF1211R
BF1211WR
BF1212
BF1212R
BF1212WR
Coss
Cig
Two equal dual-gate MOSFETs in one package
V
GS (th)
(5)
(5)
(5) (6) (7)
(5)
(5) (7) (8)
(5) (6) (7)
(11) (12)
(5) (6) (7)
Package
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT666
SOT363
SOT143
SOT143R
SOT343
SOT143
SOT143R
SOT343
V
(V)
10
10
10
10
6
6
7
6
6
6
6
6
6
6
6
6
6
6
6
6
6
DS
(5)
(6)
(7)
Two low-noise gain amplifiers in one package
Transistor A: fully internal bias,
transistor B: partly internal bias
Internal switching function
(mA)
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
I
D
Min
11
14
14
13
14
14
11
11
11
8
8
9
8
8
9
8
9
9
8
8
8
(mA)
I
DSS
Max
19
16
16
24
17
16
16
23
17
23
18
24
17
24
17
19
19
19
16
16
16
Min
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
V
(p)GS
(V)
(8)
Transistor A: partly internal bias, transistor B:
fully internal bias
1.2
1.2
1.2
Max
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
(1)
(1)
(1)
30 typ
32 typ
Min
23
25
25
26
28
26
26
33
29
26
28
26
28
25
25
25
28
28
28
Characteristics
(mS)
|Yfs|
Max
35
40
41
43
40
40
48
44
41
43
41
43
40
40
40
43
43
43
(pF)
Typ
Cis
2.6
1.7
1.7
2.2
1.8
2.4
1.7
2.2
2.2
2.2
2.1
2.1
2.1
1.7
1.7
1.7
2
2
2
2
2
0.85
0.85
0.85
0.75
0.85
0.85
0.85
0.75
0.85
0.85
Cos
(pF)
Typ
0.9
0.9
1.1
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
F @ 800
MHz
Typ
1.9
1.1
1.1
1.4
1.4
1.2
1.4
1.6
1.4
1.4
1.4
1.4
1.4
1.4
1.4
1.3
1.3
1.3
1.1
1.1
1.1
VHF
•
•
•
•
•
•
•
•
•
•
•
UHF
•
•
•
•
•
•
•
•
•
•
•
•
6