BLF6G20LS-140,112 NXP Semiconductors, BLF6G20LS-140,112 Datasheet - Page 5

IC BASESTATION FINAL SOT896B

BLF6G20LS-140,112

Manufacturer Part Number
BLF6G20LS-140,112
Description
IC BASESTATION FINAL SOT896B
Manufacturer
NXP Semiconductors

Specifications of BLF6G20LS-140,112

Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
1.93GHz
Gain
16.5dB
Voltage - Rated
65V
Current Rating
39A
Current - Test
1A
Voltage - Test
28V
Power - Output
35.5W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
13 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4419
934060897112
BLF6G20LS-140
BLF6G20LS-140
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PCI Express PHYs and
channel switches
Integrated power
management
Logic devices
Microcontrollers
UARTs
RF
Small-signal discretes
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Small-signal devices such as low-V
equipped transistors (RETs), single and double low-V
protection diodes with up to 18 lines.
F
(MEGA) Schottky rectifiers, single and double resistor-
CEsat
(BISS) transistors, and ESD
5

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