BLF177,112 NXP Semiconductors, BLF177,112 Datasheet - Page 5

• Manufacturer Part Number: BLF177,112
• Description: TRANSISTOR RF DMOS SOT121B
• Manufacturer: NXP Semiconductors

Specifications of BLF177,112

• Package / Case: SOT-121B
• Transistor Type: N-Channel
• Frequency: 108MHz
• Gain: 19dB
• Voltage - Rated: 125V
• Current Rating: 16A
• Voltage - Test: 50V
• Power - Output: 150W
• Forward Transconductance Gfs (max / Min): 6.2 S, 4.5 S
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220000 mW
• Maximum Operating Temperature: + 200 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2386; 933930010112; BLF177; BLF177

NXP Semiconductors
handbook, halfpage
handbook, halfpage
HF/VHF power MOS transistor
R DSon
V
Fig.4
(m )
I
Fig.6
(mV/K)
D
DS
T.C.
= 5 A; V
400
300
200
100
= 10 V; valid for T
0
1
2
3
4
5
10
0
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
Drain-source on-state resistance as a
function of junction temperature; typical
values.
2
GS
= 10 V.
h
10
= 25 to 70 C.
50
1
100
1
T j ( C)
I D (A)
MGP092
MGP090
150
10
Rev. 06 - 24 January 2007
handbook, halfpage
handbook, halfpage
V
Fig.5
V
Fig.7
DS
GS
(A)
(pF)
I D
1200
C
800
400
= 10 V.
= 0; f = 1 MHz.
30
20
10
0
0
0
0
Drain current as a function of gate-source
voltage; typical values.
Input and output capacitance as functions
of drain-source voltage; typical values.
20
5
10
40
Product specification
C os
C is
V GS (V)
V DS (V)
BLF177
MGP091
MBK408
5 of 19
15
60