BLF245,112 NXP Semiconductors, BLF245,112 Datasheet - Page 11

• Manufacturer Part Number: BLF245,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF245,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 175MHz
• Gain: 15.5dB
• Voltage - Rated: 65V
• Current Rating: 6A
• Noise Figure: 2dB
• Current - Test: 50mA
• Voltage - Test: 28V
• Power - Output: 30W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.75 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 68000 mW
• Maximum Operating Temperature: + 200 C
• Application: VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 15.5@28V/12@12.5VdB
• Noise Figure (max): 2(Typ)dB
• Frequency (max): 175MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 1.9S
• Drain Source Resistance (max): 750@10Vmohm
• Input Capacitance (typ)@vds: 125@28VpF
• Output Capacitance (typ)@vds: 75@28VpF
• Reverse Capacitance (typ): 7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 67%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 68000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2402; 933817060112; BLF245; BLF245

Philips Semiconductors
2003 Sep 02
handbook, halfpage
handbook, halfpage
VHF power MOS transistor
Class-B operation; V
P
Fig.15 Input impedance as a function of frequency
L
( )
= 30 W; T
Z i
40
30
20
10
0
20
Fig.17 Definition of MOS impedance.
(series components); typical values.
h
= 25 C; R
Z i
40
DS
= 28 V; I
th mb-h
60
r i
x i
= 0.3 K/W.
DQ
= 50 mA;
Z L
80
MBA379
100
f (MHz)
MGP177
120
11
handbook, halfpage
handbook, halfpage
Class-B operation; V
P
Fig.16 Load impedance as a function of frequency
Class-B operation; V
P
Fig.18 Power gain as a function of frequency;
L
L
(dB)
= 30 W; T
= 30 W; T
( )
G p
Z L
16
12
40
30
20
10
8
4
0
0
20
20
(series components); typical values.
typical values.
h
h
= 25 C; R
= 25 C; R
40
40
DS
DS
= 28 V; I
= 28 V; I
th mb-h
th mb-h
60
60
R L
X L
= 0.3 K/W.
= 0.3 K/W.
DQ
DQ
= 50 mA;
= 50 mA;
80
80
Product specification
100
100
f (MHz)
f (MHz)
BLF245
MGP178
MGP179
120
120