BLF1043,112 NXP Semiconductors, BLF1043,112 Datasheet - Page 3

• Manufacturer Part Number: BLF1043,112
• Description: TRANSISTOR RF LDMOS SOT538A
• Manufacturer: NXP Semiconductors

Specifications of BLF1043,112

• Package / Case: SOT-538A
• Transistor Type: LDMOS
• Frequency: 960MHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current Rating: 2.2A
• Current - Test: 85mA
• Voltage - Test: 26V
• Power - Output: 10W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 1.05 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 2.2 A
• Maximum Operating Temperature: + 200 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2409; 934055708112; BLF1043; BLF1043

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under RF operating conditions. Typical value with device soldered on PC board
CHARACTERISTICS
T
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
Ruggedness in class-AB operation
The BLF1043 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
2003 Mar 13
V
V
I
T
T
R
V
V
I
I
I
g
R
C
C
C
CW, 2-tone, class-AB
SYMBOL
SYMBOL
SYMBOL
MODE OF OPERATION
D
j
DSS
DSX
GSS
fs
stg
j
DS
GS
(BR)DSS
GSth
th j-h
= 25 C unless otherwise specified.
DSon
iss
oss
rss
UHF power LDMOS transistor
with 32 via holes (diameter 0.3 mm) and thermal compound between PCB and heatsink.
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
thermal resistance from junction to heatsink T
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
DS
PARAMETER
= 26 V; f = 960 MHz at rated load power.
PARAMETER
f
1
= 960; f
PARAMETER
(MHz)
2
f
= 960.1
V
V
V
V
V
V
V
V
V
V
GS
DS
GS
GS
GS
DS
DS
GS
GS
GS
V
(V)
26
= 10 V; I
= 10 V; I
= 10 V; I
= 0; I
= 0; V
= V
= 15 V; V
= 0; V
= 0; V
= 0; V
h
DS
= 25 C; R
3
GSth
mb
CONDITIONS
D
DS
DS
DS
DS
= 0.2 mA
= 25 C; note 1
+ 9 V; V
D
D
D
= 26 V
= 26 V; f = 1 MHz
= 26 V; f = 1 MHz
= 26 V; f = 1 MHz
(mA)
= 20 mA
= 0.75 A
= 0.75 A
DS
I
85
DQ
th j-h
65
CONDITIONS
= 0
DS
MIN.
= 9 K/W, unless otherwise specified.
10 (PEP)
= 10 V
(W)
P
L
65
2.2
+150
200
15
65
4
2.8
MIN.
>16.5
(dB)
G
MAX.
p
0.5
1.05
11
9
0.5
TYP.
VALUE
Product specification
9
>38
(%)
D
V
V
A
BLF1043
5
1.5
40
C
C
MAX.
UNIT
UNIT
K/W
(dBc)
V
V
A
nA
S
pF
pF
pF
d
UNIT
A
im
25