BLF542,112 NXP Semiconductors, BLF542,112 Datasheet - Page 5

• Manufacturer Part Number: BLF542,112
• Description: TRANSISTOR RF DMOS SOT171A
• Manufacturer: NXP Semiconductors

Specifications of BLF542,112

• Package / Case: SOT-171A
• Transistor Type: N-Channel
• Frequency: 500MHz
• Gain: 16.5dB
• Voltage - Rated: 65V
• Current Rating: 1.5A
• Current - Test: 50mA
• Voltage - Test: 28V
• Power - Output: 5W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 5 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Quad Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 200 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 5W
• Power Gain (typ)@vds: 16.5@28VdB
• Frequency (max): 500MHz
• Package Type: CDFM
• Pin Count: 6
• Forward Transconductance (typ): 0.24S
• Drain Source Resistance (max): 5000@15Vmohm
• Input Capacitance (typ)@vds: 14@28VpF
• Output Capacitance (typ)@vds: 9.4@28VpF
• Reverse Capacitance (typ): 1.7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 59%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 20000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2417; 934006660112; BLF542; BLF542

Philips Semiconductors
2003 Sep 18
handbook, halfpage
handbook, halfpage
R DS (on)
UHF power MOS transistor
V
Fig.4
I
Fig.6
D
(mV/K)
DS
( )
T.C.
= 0.3 A; V
= 10 V.
–2
–4
4
2
0
6
4
2
0
0
0
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
Drain-source on-resistance as a function of
junction temperature; typical values.
GS
= 15 V
100
50
200
100
I D (mA)
T j (
o
MBB777
C)
MBB778
300
150
5
handbook, halfpage
handbook, halfpage
V
Fig.5
V
Fig.7
DS
GS
(pF)
1.5
(A)
0.5
= 10 V; T
C
= 0; f = 1 MHz.
I D
30
20
10
1
0
0
0
0
Drain current as a function of gate-source
voltage; typical values.
Input and output capacitance as functions
of drain-source voltage; typical values.
j
= 25 C.
10
5
C os
C is
10
20
Product specification
V GS (V)
V DS (V)
BLF542
MBB759
MBB776
15
30