BLF6G21-10G,112 NXP Semiconductors, BLF6G21-10G,112 Datasheet
BLF6G21-10G,112
Specifications of BLF6G21-10G,112
934063436112
BLF6G21-10G,112
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BLF6G21-10G,112 Summary of contents
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... BLF6G21-10G Power LDMOS transistor Rev. 02 — 11 December 2009 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 100 mA Mode of operation 2-carrier W-CDMA 1-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; ...
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... Ordering information Package Name Description - ceramic surface-mounted package; 2 leads Limiting values Parameter Conditions drain-source voltage gate-source voltage storage temperature junction temperature Rev. 02 — 11 December 2009 BLF6G21-10G Power LDMOS transistor Simplified outline Graphic symbol 1 [ Min Max - 65 0.5 +13 65 +150 ...
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... PDPCH 100 mA Symbol ACPR 7.1 Ruggedness in class-AB operation The BLF6G21-10G is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 2140 MHz at P BLF6G21-10G_2 Product data sheet Thermal characteristics thermal resistance from junction to case T Conditions ...
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... 100 mA input return loss as a function of load power; typical values 001aal121 D (%) ( 2.11 GHz ( 2.14 GHz ( 2.17 GHz Fig 3. Rev. 02 — 11 December 2009 BLF6G21-10G Power LDMOS transistor 001aal120 (1) ( 100 mA drain efficiency as a function of load power; typical values © NXP B.V. 2009. All rights reserved. ...
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... 100 mA 1-carrier W-CDMA input return loss as a function of load power; typical values 001aal124 D (%) (1) (2) ( ( 2.11 GHz ( 2.14 GHz ( 2.17 GHz Fig 6. Rev. 02 — 11 December 2009 BLF6G21-10G Power LDMOS transistor 001aal123 (1) ( (1) 30 (2) ( 100 mA 1-carrier W-CDMA drain efficiency as a function of load power; typical values © ...
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... GHz ( 2.17 GHz Fig (dB 0 100 mA 2-carrier W-CDMA input return loss as a function of load power; typical values Rev. 02 — 11 December 2009 BLF6G21-10G Power LDMOS transistor (3) (2) ( 100 mA; carrier spacing 10 MHz 1-carrier W-CDMA adjacent channel power ratio as a function of load power; ...
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... Fig 11. 2-carrier W-CDMA drain efficiency as a 001aal131 40 ACPR (dBc (3) (2) ( 1.2 1.8 P ( 2.11 GHz ( 2.14 GHz ( 2.17 GHz Fig 13. 2-carrier W-CDMA adjacent channel power Rev. 02 — 11 December 2009 BLF6G21-10G Power LDMOS transistor (1) (2) ( 0.6 1 100 mA function of load power; typical values 0 0.6 1 100 mA ...
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... REFERENCES JEDEC JEITA Rev. 02 — 11 December 2009 BLF6G21-10G Power LDMOS transistor 2.03 0.10 0.58 0.25 0.97 0.25 1.27 0.00 0.43 ...
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... CW powersweeps. 5: added 1-carrier W-CDMA powersweeps. 6: added 2-carrier W-CDMA powersweeps. Objective data sheet Rev. 02 — 11 December 2009 BLF6G21-10G Power LDMOS transistor Change notice Supersedes - BLF6G21-10G_1 - - © NXP B.V. 2009. All rights reserved ...
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... Export might require a prior authorization from national authorities. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 11 December 2009 BLF6G21-10G Power LDMOS transistor © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 11 December 2009 Document identifier: BLF6G21-10G_2 ...