BF862,215 NXP Semiconductors, BF862,215 Datasheet - Page 3

• Manufacturer Part Number: BF862,215
• Description: JFET N-CHAN 20V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BF862,215

• Package / Case: SST3 (SOT-23-3)
• Transistor Type: N-Channel JFET
• Voltage - Rated: 20V
• Current Rating: 25mA
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 20 V
• Gate-source Breakdown Voltage: - 20 V
• Continuous Drain Current: 40 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 20 V
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1968-2; 934055519215; BF862 T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Main heat transfer is via the gate lead.
THERMAL CHARACTERISTICS
Note
1. Soldering point of the gate lead.
2000 Jan 05
handbook, halfpage
V
V
V
I
I
P
T
T
R
DS
G
stg
j
DS
DG
GS
tot
N-channel junction FET
th j-s
SYMBOL
SYMBOL
(mW)
P tot
400
300
200
100
0
0
Fig.2 Power derating curve.
drain-source voltage
drain-gate voltage
gate-source voltage
drain-source current
forward gate current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering
point
40
80
PARAMETER
PARAMETER
120
T s (°C)
MCD808
160
3
T
note 1
s
 90 C; note 1
CONDITIONS
CONDITIONS






65

MIN.
VALUE
200
Product specification
20
20
20
40
10
300
+150
150
MAX.
BF862
UNIT
K/W
V
V
V
mA
mA
mW
C
C
UNIT