1N5767 Avago Technologies US Inc., 1N5767 Datasheet - Page 3

DIODE PIN RF SWITCH 100V AXIAL

1N5767

Manufacturer Part Number
1N5767
Description
DIODE PIN RF SWITCH 100V AXIAL
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of 1N5767

Diode Type
PIN - Single
Package / Case
Axial
Voltage - Peak Reverse (max)
100V
Current - Max
100mA
Capacitance @ Vr, F
0.4pF @ 50V, 1MHz
Resistance @ If, F
2.5 Ohm @ 100mA, 100MHz
Power Dissipation (max)
250mW
Diode Case Style
Axial Leaded
Series Resistance @ If
2.5ohm
Peak Reflow Compatible (260 C)
No
Leaded Process Compatible
No
Breakdown Voltage
100V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1N5767
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Typical Parameters at T
3
Figure 1. Forward Current vs. Forward
Voltage.
Figure 4. Typical Capacitance vs.
Reverse Voltage.
Figure 7. Typical Second Order
Intermodulation Distortion.
0.01
100
100
1.0
0.1
20
40
60
80
10
.5
0
0
1
0
0
0
10 dB Bridged Tee Attenuator
40 dB mV Output Levels
One Input Frequency Fixed 100 MHz
10
V
0.2
10
125°C
–60°C
F
25°C
REVERSE VOLTAGE (V)
– FORWARD VOLTAGE (V)
20
5082-3001, 3039,
3077, 3080
IN5719
FREQUENCY (MHz)
20
0.4
30
30
0.6
40
5082-3039
IN5719
5082-3001
40
50
A
0.8
= 25°C (unless otherwise noted)
50
5082-3081
5082-3080
5082-3379
60
1.0
60
70
1.2
70
80
10,000
Figure 8. Typical Cross Intermodulation
Distortion.
Figure 5. Typical Capacitance vs.
Reverse Voltage.
Figure 2. Typical RF Resistance vs.
Forward Bias Current.
1000
2.5
2.0
1.5
1.0
100
0.1
10
20
30
40
50
60
70
80
.5
10
0
0.001
1
0
0
I
F
MODULATED FREQUENCY (MHz)
– FORWARD BIAS CURRENT (mA)
10
10
PIN Diode Cross Modulation
10 dB Bridged Tee Attenuator
Unmodulated Frequency 100 MHz
0.01
REVERSE VOLTAGE (V)
20
20
100% Modulation 15 kHz
40 dB mV Output Levels
30
0.1
30
5082-3188
40
5082-3001
5082-3039
5082-3077
IN5719
40
1
50
50
5082-3081
5082-3080
5082-3379
5082-3080
5082-3081
5082-3379
60
10
60
70
100
70
80
100,000
10,000
Figure 6. Typical Reverse Recovery Time
vs. Forward Current for Various Reverse
Driving Voltages.
Figure 3. Typical RF Resistance vs.
Forward Bias Current.
1000
1000
100
100
10
10
0.001
1
0
I
F
5082-3001
– FORWARD BIAS CURRENT (mA)
V
V
V
R
R
FORWARD CURRENT (mA)
R
IN5719
0.01
= 10 V
= 20 V
= 5 V
3039
3077
10
0.1
5082-3080
5082-3379
5082-3081
1
20
10
100
30

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