HSMP-389F-TR1 Avago Technologies US Inc., HSMP-389F-TR1 Datasheet - Page 3

DIODE PIN SWITCH 100V 1A SOT-323

HSMP-389F-TR1

Manufacturer Part Number
HSMP-389F-TR1
Description
DIODE PIN SWITCH 100V 1A SOT-323
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of HSMP-389F-TR1

Package / Case
SC-70-3, SOT-323-3
Diode Type
PIN - 1 Pair Common Cathode
Voltage - Peak Reverse (max)
100V
Current - Max
1A
Capacitance @ Vr, F
0.3pF @ 5V, 1MHz
Resistance @ If, F
2.5 Ohm @ 5mA, 100MHz
Series Resistance @ If
2.5ohm
Peak Reflow Compatible (260 C)
No
Reel Quantity
3000
Pin Configuration
Common Cathode
Leaded Process Compatible
No
Mounting Type
Surface Mount
Breakdown Voltage
100V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Power Dissipation (max)
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HSMP-389F-TR1
Manufacturer:
AVAGO
Quantity:
90 000
Part Number:
HSMP-389F-TR1
Manufacturer:
AGILENT
Quantity:
20 000
Part Number:
HSMP-389F-TR1G
Manufacturer:
AVAGO
Quantity:
73 000
Electrical Specifications, T
High Frequency (Low Inductance, 500 MHz–3 GHz) PIN Diodes
Typical Parameters at T
3
Test Conditions
Number
HSMP-
Part Number
Test Conditions
489x
Part
HSMP-
389B
389U
389V
3890
3892
3893
3894
3895
389C
389E
389F
389L
389R
389T
Test Conditions
Part Number
HSMP-
389x
Package
Marking
Code
GA
Package
Marking
[1]
Code
GU
GV
G0
G2
G3
G4
G5
G0
G2
G3
G4
GL
S
Z
C
Configuration
Dual Anode
= 25°C
C
Code
Lead
= 25°C, each diode
B
C
R
U
V
0
2
3
4
5
E
F
L
T
Configuration
Single
Series
Common Anode
Common Cathode
Unconnected Pair
Single
Series
Common Anode
Common Cathode
Unconnected Trio
Dual Switch Mode
Low Inductance Single
Series-Shunt Pair
High Frequency Series Pair
Series Resistance
f = 100 MHz
I
F
R
= 1 mA
Breakdown
S
3.8
I
Minimum
Measure
R
V
Voltage
(
V
R
BR
100
= V
)
10 µA
(V)
BR
Resistance
Maximum
I
F
R
Series
= 5 mA
S
2.5
(
Voltage V
)
Breakdown
I
Minimum
V
Measure
R
Carrier Lifetime
R
100
I
= V
I
F
10 µA
R
= 10 mA
τ
= 6 mA
200
BR
BR
(ns)
Capacitance
(V)
f = 1 MHz
V
Typical
C
R
Total
0.33
T
= 5 V
(pF)
Series Resistance
f = 100 MHz
Maximum
I
F
R
= 5 mA
S
2.5
(Ω)
Capacitance
Maximum
f = 1 MHz
V
C
0.375
R
Total
T
= 5 V
(pF)
Total Capacitance
0.20 @ 5 V
C
T
Total Capacitance
(pF)
Maximum
f = 1 MHz
f = 500 MHz –
V
C
Inductance
R
0.30
T
L
= 5 V
Typical
(pF)
3 GHz
Total
T
1.0
(nH)

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