BAR 66 E6327 Infineon Technologies, BAR 66 E6327 Datasheet

DIODE ARRAY OVP 150V 200MA SOT23

BAR 66 E6327

Manufacturer Part Number
BAR 66 E6327
Description
DIODE ARRAY OVP 150V 200MA SOT23
Manufacturer
Infineon Technologies
Datasheet

Specifications of BAR 66 E6327

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Diode Type
PIN - 1 Pair Series Connection
Voltage - Peak Reverse (max)
150V
Current - Max
200mA
Capacitance @ Vr, F
0.6pF @ 35V, 1MHz
Resistance @ If, F
1.8 Ohm @ 5mA, 100MHz
Power Dissipation (max)
250mW
Configuration
Dual Series
Reverse Voltage
150 V
Forward Continuous Current
200 mA
Carrier Life
0.7 us
Forward Voltage Drop
1.2 V @ 50 mA
Maximum Diode Capacitance
0.6 pF @ 35 V
Maximum Operating Temperature
+ 125 C
Maximum Series Resistance @ Maximum If
1.8 Ohm @ 5 mA
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BAR 66 E6327
BAR66E6327INTR
BAR66E6327XT
SP000010187
Silicon PIN Diode Array
BAR66
BAR66
Parameter
Diode reverse voltage
Forward current
ESD contact discharge
Peak pulse current (t
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
3
4
Type
Maximum Ratings at T
Total power dissipation
T
Junction temperature
Pb-containing package may be available upon special request
V ESD according to IEC61000-4-2, only valid if pin 1 and pin 2 are connected
I pp according to IEC61000-4-5, only valid if pin 1 and pin 2 are connected
For calculation of R thJA please refer to Application Note Thermal Resistance
Surge protection device
Designed for surge overvoltage clamping
Pb-free (RoHS compliant) package
Qualified according AEC Q101
s
in antiparallel connection
25 °C
p
= 8 / 20 µs)
2)
A
4)
= 25°C, unless otherwise specified
, BAR 66
SOT23
Package
3)
1)
Configuration
series
1
Symbol
V
I
P
V
I
T
T
Symbol
R
T
F
pp
R
tot
ESD
op
stg
thJS
j
-55 ... 150
-55 ... 125
Value
Value
150
200
250
150
25
12
290
L
S
1.8
(nH)
2007-04-19
BAR66...
Marking
PMs
Unit
V
mA
mW
kV
A
°C
Unit
K/W

Related parts for BAR 66 E6327

BAR 66 E6327 Summary of contents

Page 1

Silicon PIN Diode Array Surge protection device Designed for surge overvoltage clamping in antiparallel connection Pb-free (RoHS compliant) package Qualified according AEC Q101 BAR66 Type BAR66 Maximum Ratings 25°C, unless otherwise specified A Parameter Diode reverse voltage ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Breakdown voltage µA (BR) Reverse current V = 100 V R Forward voltage Clamping voltage (contact) ESD ...

Page 3

Diode capacitance Parameter 0.8 pF 0.6 0.5 1MHz 0.4 100MHz 0.3 0.2 0 Forward current Parameter ...

Page 4

Permissible Puls Load R thJS BAR66 0.5 0.2 0.1 0.05 0. 0.01 0.005 Permissible Pulse ...

Page 5

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

Page 6

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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