BAR 88-07LRH E6327 Infineon Technologies, BAR 88-07LRH E6327 Datasheet - Page 3

• Manufacturer Part Number: BAR 88-07LRH E6327
• Description: DIODE PIN PAR 80V 100MA TSLP-4-7
• Manufacturer: Infineon Technologies

Specifications of BAR 88-07LRH E6327

• Package / Case: TSLP-4-7
• Diode Type: PIN - 2 Independant
• Voltage - Peak Reverse (max): 80V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
• Resistance @ If, F: 600 mOhm @ 10mA, 100MHz
• Power Dissipation (max): 250mW
• Configuration: Dual Parallel
• Reverse Voltage: 80 V
• Forward Continuous Current: 100 mA
• Frequency Range: UHF
• Carrier Life: 0.5 us
• Forward Voltage Drop: 1.2 V
• Maximum Diode Capacitance: 0.4 pF at 1 V
• Maximum Operating Temperature: + 125 C
• Maximum Series Resistance @ Maximum If: 0.6 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 2.5 Ohms at 1 mA
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAR8807LRHE6327XT; SP000053489

1
Electrical Characteristics at T
Parameter
AC Characteristics
Diode capacitance
V
V
V
V
Reverse parallel resistance
V
V
V
Forward resistance
I
I
I
Charge carrier life time
I
R
I-region width
Insertion loss
I
I
I
Isolation
V
V
V
BAR88-02LRH in series configuration, Z = 50 Ω
F
F
F
F
F
F
F
R
R
R
R
R
R
R
R
R
R
L
= 1 mA, f = 100 MHz
= 5 mA, f = 100 MHz
= 10 mA, f = 100 MHz
= 10 mA, I
= 1 mA, f = 1.8 GHz
= 5 mA, f = 1.8 GHz
= 10 mA, f = 1.8 GHz
= 100 Ω
= 1 V, f = 1 MHz
= 0 V, f = 100 MHz
= 0 V, f = 1 GHz
= 0 V, f = 1.8 GHz
= 0 V, f = 100 MHz
= 0 V, f = 1 GHz
= 0 V, f = 1.8 GHz
= 0 V, f = 0.9 GHz
= 0 V, f = 1.8 GHz
= 0 V, f = 2.45 GHz
1)
R
1)
= 6 mA, measured at I
A
= 25°C, unless otherwise specified
R
= 3 mA,
3
Symbol
C
R
r
τ
W
I
I
L
SO
f
T
P
rr
I
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
0.28
0.25
0.11
0.07
0.06
typ.
500
2.5
1.5
1.5
0.8
0.6
0.3
0.4
65
13
15
11
9
max.
2010-03-05
0.4
2.5
BAR88...
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
pF
k Ω
Ω
ns
µm
dB