BA 885 E6327 Infineon Technologies, BA 885 E6327 Datasheet - Page 2

• Manufacturer Part Number: BA 885 E6327
• Description: DIODE RF SW 50V 50MA SOT-23
• Manufacturer: Infineon Technologies

Specifications of BA 885 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 50V
• Current - Max: 50mA
• Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
• Resistance @ If, F: 7 Ohm @ 10mA, 100MHz
• Configuration: Single
• Reverse Voltage: 50 V
• Forward Continuous Current: 50 mA
• Frequency Range: MF, HF, VHF, UHF
• Carrier Life: 1.6 us
• Forward Voltage Drop: 1.1 V
• Maximum Diode Capacitance: 0.6 pF at 10 V
• Maximum Operating Temperature: + 125 C
• Maximum Series Resistance @ Maximum If: 7 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 40 Ohms at 1.5 mA
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power Dissipation (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BA885E6327XT; SP000010151

Electrical Characteristics at T
Parameter
DC Characteristics
Reverse current
V
Forward voltage
I
AC Characteristics
Diode capacitance
V
V
Reverse parallel resistance
V
V
Forward resistance
I
I
Charge carrier life time
I
R
I-region width
F
F
F
F
R
R
R
R
R
L
= 50 mA
= 1.5 mA, f = 100 MHz
= 10 mA, f = 100 MHz
= 10 mA, I
= 30 V
= 100
= 0 V, f = 100 MHz
= 10 V, f = 1 MHz
= 1 V, f = 100 MHz
= 0 V, f = 1 GHz
R
= 6 mA, measured at I
A
= 25°C, unless otherwise specified
R
= 3 mA ,
2
Symbol
I
V
C
R
r
W
R
f
F
T
P
rr
I
min.
BA595/BA885/BA895...
-
-
-
-
-
-
-
-
-
-
Values
1600
0.26
0.22
typ.
130
4.5
50
10
22
-
-
max.
1.1
2007-04-19
0.4
0.6
20
40
-
-
7
-
-
V
pF
ns
Unit
nA
k
µm