MBD770DWT1G ON Semiconductor, MBD770DWT1G Datasheet - Page 4

• Manufacturer Part Number: MBD770DWT1G
• Description: DIODE SCHOTTKY DUAL 70V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MBD770DWT1G

• Diode Type: Schottky - 2 Independent
• Voltage - Peak Reverse (max): 70V
• Capacitance @ Vr, F: 1pF @ 20V, 1MHz
• Power Dissipation (max): 120mW
• Package / Case: SC-70-6, SC-88, SOT-363
• Product: Schottky Diodes
• Peak Reverse Voltage: 70 V
• Forward Continuous Current: 0.01 A
• Configuration: Dual Anti Parallel
• Forward Voltage Drop: 1 V @ 0.01 A
• Maximum Reverse Leakage Current: 0.2 uA @ 35 V
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Max: -
• Resistance @ If, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.001
0.01
2.8
2.4
2.0
1.6
0.8
1.2
0.4
1.0
0.1
10
0
0
0
MBD330DWT1G
MBD330DWT1G
3.0
T
T
T
A
A
A
6.0
= 100°C
6.0
= 75°C
= 25°C
Figure 6. Total Capacitance
Figure 8. Reverse Leakage
V
V
R
R
, REVERSE VOLTAGE (VOLTS)
9.0
, REVERSE VOLTAGE (VOLTS)
12
12
15
18
18
21
TYPICAL CHARACTERISTICS
f = 1.0 MHz
24
24
http://onsemi.com
MBD330DWT1G
27
30
30
4
200
100
500
400
300
100
1.0
0.1
10
0
0.2
0
MBD330DWT1G
MBD330DWT1G
T
10
A
= 85°C
Figure 7. Minority Carrier Lifetime
KRAKAUER METHOD
0.4
20
Figure 9. Forward Voltage
V
F
I
, FORWARD VOLTAGE (VOLTS)
F
30
, FORWARD CURRENT (mA)
T
A
= 25°C
40
0.6
T
50
A
= - 40°C
60
0.8
70
1.0
80
90
100
1.2