MBD770DWT1G ON Semiconductor, MBD770DWT1G Datasheet

MBD770DWT1G

Manufacturer Part Number

MBD770DWT1G

Description

DIODE SCHOTTKY DUAL 70V SOT-363

Manufacturer

ON Semiconductor

Datasheet

1.MBD330DWT1G.pdf (6 pages)

Specifications of MBD770DWT1G

Diode Type

Schottky - 2 Independent

Voltage - Peak Reverse (max)

70V

Capacitance @ Vr, F

1pF @ 20V, 1MHz

Power Dissipation (max)

120mW

Package / Case

SC-70-6, SC-88, SOT-363

Product

Schottky Diodes

Peak Reverse Voltage

70 V

Forward Continuous Current

0.01 A

Configuration

Dual Anti Parallel

Forward Voltage Drop

1 V @ 0.01 A

Maximum Reverse Leakage Current

0.2 uA @ 35 V

Operating Temperature Range

- 55 C to + 125 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Max

Resistance @ If, F

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MBD770DWT1G

Manufacturer:

ON Semiconductor

Quantity:

2 150

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MBD770DWT1G

Manufacturer:

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

MBD770DWT1G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 6
Download datasheet (150Kb)

MBD110DWT1G,

MBD330DWT1G,

MBD770DWT1G

Dual Schottky Barrier

Diodes

device count and into smaller packages. The new SOT−363 package is

a solution which simplifies circuit design, reduces device count, and

reduces board space by putting two discrete devices in one small

six−leaded package. The SOT−363 is ideal for low−power surface

mount applications where board space is at a premium, such as

portable products.

Surface Mount Comparisons:

Space Savings:

spin−offs of our popular MMBD101LT1, MMBD301LT1, and

MMBD701LT1 SOT−23 devices. They are designed for

high−efficiency UHF and VHF detector applications. Readily

available to many other fast switching RF and digital applications.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MAXIMUM RATINGS

October, 2009 − Rev. 6

Area (mm

Max Package P

Device Count

SOT−363

Reverse Voltage

Forward Power Dissipation T

Junction Temperature

Storage Temperature Range

Application circuit designs are moving toward the consolidation of

The MBD110DW, MBD330DW, and MBD770DW devices are

Compliant

Extremely Low Minority Carrier Lifetime

Very Low Capacitance

Low Reverse Leakage

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

)

Package

Rating

(mW)

MBD330DWT1G

MBD770DWT1G

MBD110DWT1G

Preferred Device

= 25°C

1 SOT−23

SOT−363

40%

120

4.6

Symbol

stg

2 SOT−23

−55 to +125

−55 to +150

SOT−23

Value

120

70%

7.0

225

7.6

Unit

°C

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

(Note: Microdot may be in either location)

Cathode 3

Anode 1

ORDERING INFORMATION

N/C 2

MARKING DIAGRAM

= Device Code

= Date Code

= Pb−Free Package

http://onsemi.com

SC−88 / SOT−363

Refer to Ordering Table,

page 2

CASE 419B

STYLE 6

xx M G

Publication Order Number:

5 N/C

4 Anode

MBD110DWT1/D

6 Cathode

Related parts for MBD770DWT1G

MBD770DWT1G Summary of contents

Page 1

... These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Reverse Voltage MBD110DWT1G MBD330DWT1G MBD770DWT1G Forward Power Dissipation T = 25°C A Junction Temperature Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied ...

Page 2

... A Symbol V MBD110DWT1G MBD330DWT1G MBD770DWT1G MBD110DWT1G MBD330DWT1G MBD770DWT1G MBD110DWT1G MBD330DWT1G MBD770DWT1G MBD110DWT1G MBD110DWT1G MBD330DWT1G MBD770DWT1G Marking Package SC−88 / SOT−363 (Pb−Free) M4 SC−88 / SOT−363 (Pb−Free) T4 SC−88 / SOT−363 (Pb−Free) H5 http://onsemi.com 2 Min Typ Max (BR)R 7 ...

Page 3

0.2 0.1 0.07 0.05 0.02 0. AMBIENT TEMPERATURE (°C) A Figure 1. Reverse Leakage 1.0 0.9 0.8 0.7 0.6 0 1.0 2.0 V ...

Page 4

MBD330DWT1G 2.4 2.0 1.6 1.2 0.8 0 3.0 6.0 9 REVERSE VOLTAGE (VOLTS) R Figure 6. Total Capacitance 10 MBD330DWT1G T = 100°C 1 75° ...

Page 5

... A 0.001 REVERSE VOLTAGE (VOLTS) R Figure 12. Reverse Leakage TYPICAL CHARACTERISTICS MBD770DWT1G 500 MBD770DWT1G f = 1.0 MHz 400 KRAKAUER METHOD 300 200 100 Figure 11. Minority Carrier Lifetime 100 MBD770DWT1G 85°C A 1.0 0 0.2 0.4 http://onsemi.com FORWARD CURRENT (mA 40° 25°C A 0.8 1.2 1 ...

Page 6

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

Related keywords

mbd770dwt1g
MBD770DWT1G datasheet
MBD770DWT1G data sheet
MBD770DWT1G pdf datasheet
MBD770DWT1G component
MBD770DWT1G part
MBD770DWT1G distributor
MBD770DWT1G RoHS
MBD770DWT1G datasheet download