BAR 89-02LRH E6433 Infineon Technologies, BAR 89-02LRH E6433 Datasheet

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BAR 89-02LRH E6433

Manufacturer Part Number
BAR 89-02LRH E6433
Description
DIODE PIN SGL 80V 100MA TSLP-2-7
Manufacturer
Infineon Technologies
Datasheet

Specifications of BAR 89-02LRH E6433

Package / Case
TSLP-2-7
Diode Type
PIN - Single
Voltage - Peak Reverse (max)
80V
Current - Max
100mA
Capacitance @ Vr, F
0.35pF @ 1V, 1MHz
Resistance @ If, F
1.5 Ohm @ 10mA, 100MHz
Power Dissipation (max)
250mW
Configuration
Single
Reverse Voltage
80 V
Forward Continuous Current
100 mA
Frequency Range
UHF
Carrier Life
0.8 us
Forward Voltage Drop
1.1 V
Maximum Diode Capacitance
0.35 pF at 1 V
Maximum Operating Temperature
+ 125 C
Maximum Series Resistance @ Maximum If
1.5 Ohms at 10 mA
Maximum Series Resistance @ Minimum If
3 Ohms at 1 mA
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAR8902LRHE6433XT
SP000083407
Silicon PIN Diode
BAR89-02LRH
Type
BAR89-02LRH
Maximum Ratings at T
Parameter
Diode reverse voltage
Forward current
Total power dissipation
T
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1
2
Pb-containing package may be available upon special request
For calculation of R
s
Optimized for antenna switches
Very low capacitance at zero volts reverse bias
Low forward resistance (typ. 0.8
Very low signal distortion
Pb-free (RoHS compliant) package
Qualified according AEC Q101
in hand held applications
at frequencies above 1GHz (typ. 0.19 pF)
133°C
thJA
please refer to Application Note Thermal Resistance
A
2)
= 25°C, unless otherwise specified
Package
TSLP-2-7
@ I
1)
F
= 10mA)
Configuration
single, leadless
1
Symbol
V
I
P
T
T
T
Symbol
R
F
j
op
stg
R
tot
thJS
-55 ... 125
-55 ... 150
Value
Value
100
250
150
80
L
65
S
0.4
(nH)
2007-04-19
BAR89...
Marking
R
Unit
V
mA
mW
°C
Unit
K/W

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BAR 89-02LRH E6433 Summary of contents

Page 1

Silicon PIN Diode Optimized for antenna switches in hand held applications Very low capacitance at zero volts reverse bias at frequencies above 1GHz (typ. 0.19 pF) Low forward resistance (typ. 0.8 Very low signal distortion Pb-free (RoHS compliant) package Qualified ...

Page 2

Electrical Characteristics at T Parameter DC Characteristics Breakdown voltage µA (BR) Reverse current Forward voltage 100 25°C, unless otherwise specified A Symbol ...

Page 3

Electrical Characteristics at T Parameter AC Characteristics Diode capacitance MHz 100 MHz GHz ...

Page 4

Diode capacitance Parameter 0.5 pF 0.4 1 MHz 100 MHz 0.35 1 GHz 1.8 GHz 0.3 0.25 0.2 0.15 0 Forward resistance 100MHz ...

Page 5

Forward current BAR89-02LRH 120 mA 100 Permissible Pulse Load Fmax FDC p BAR89-02LRH ...

Page 6

Isolation Parameter R BAR89-02LRH in series configuration - -25 - (f) 4 GHz ...

Page 7

Package Outline Top view 2 1 Cathode marking 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" Copper Marking Layout (Example) Standard Packing Reel ø180 mm = 15.000 Pieces/Reel Reel ø330 ...

Page 8

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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