DF02S-E3/77 Vishay, DF02S-E3/77 Datasheet - Page 3

• Manufacturer Part Number: DF02S-E3/77
• Description: Diode Rectifier Bridge Single 200V 1A 4-Pin Case DFS T/R
• Manufacturer: Vishay

Specifications of DF02S-E3/77

• Package: 4Case DFS
• Peak Average Forward Current: 1@Ta=40C A
• Peak Forward Voltage: 1.1 V
• Peak Reverse Current: 5 uA
• Peak Reverse Repetitive Voltage: 200 V
• Bridge Type: Single Phase
• Configuration: Single
• Voltage - Peak Reverse (max): 200V
• Current - Dc Forward (if): 1A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD (DFS)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 200 V
• Maximum Rms Reverse Voltage: 140 V
• Max Surge Current: 50 A
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 5 uA
• Maximum Operating Temperature: + 150 C
• Length: 8.51 mm
• Width: 6.5 mm
• Height: 3.3 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Phase Type: Single Phase
• Number Of Elements: 1
• Peak Rep Rev Volt: 200V
• Rms Voltage (max): 140V
• Peak Non-repetitive Surge Current (max): 50A
• Avg. Forward Curr (max): 1@Ta=40CA
• Rev Curr: 5uA
• Forward Voltage: 1.1V
• Package Type: Case DFS
• Operating Temp Range: -55C to 150C
• Pin Count: 4
• Mounting: Surface Mount
• Operating Temperature Classification: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant
• Other names: Q3069618

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88573
Revision: 30-Jan-08
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.01
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
0.6
20
T
J
0.320 (8.13)
0.335 (8.51)
0.205 (5.2)
T
0.195 (5.0)
= 125 °C
J
0.8
40
= 50 °C
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T
Pulse Width = 300 µs
1 % Duty Cycle
Case Style DFS
1.0
J
60
45°
= 25 °C
0.040 (1.02)
0.047 (1.20)
0.120 (3.05)
0.130 (3.3)
1.2
80
100
1.4
0.013 (0.330)
0.009 (0.241)
0.060 (1.524)
0.040 (1.016)
0.255 (6.5)
0.404 (10.3)
0.245 (6.2)
0.386 (9.80)
100
100
0.1
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.013 (0.330)
0.01
0.003 (0.076)
Figure 6. Typical Transient Thermal Impedance
1
Vishay General Semiconductor
(1.20 MIN.)
0.047 MIN.
0.060 MIN.
(1.52 MIN.)
0.1
Mounting Pad La yout
Reverse Voltage (V)
t - Heating Time (s)
DF005S thru DF10S
0.205 (5.2)
0.195 (5.0)
10
1
(10.26 MAX.)
0.404 MAX.
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
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100
100
3