BFT92T/R NXP Semiconductors, BFT92T/R Datasheet

no-image

BFT92T/R

Manufacturer Part Number
BFT92T/R
Description
Trans GP BJT PNP 15V 0.025A 3-Pin TO-236AB T/R
Manufacturer
NXP Semiconductors
Type
PNPr
Datasheet

Specifications of BFT92T/R

Package
3TO-236AB
Supplier Package
TO-236AB
Pin Count
3
Minimum Dc Current Gain
20@14mA@10V
Maximum Operating Frequency
5000(Typ) MHz
Maximum Dc Collector Current
0.025 A
Maximum Collector Base Voltage
20 V
Maximum Collector Emitter Voltage
15 V
Maximum Emitter Base Voltage
2 V
DISCRETE SEMICONDUCTORS
DATA SHEET
BFT92
PNP 5 GHz wideband transistor
Product specification
November 1992

Related parts for BFT92T/R

BFT92T/R Summary of contents

Page 1

DATA SHEET BFT92 PNP 5 GHz wideband transistor Product specification DISCRETE SEMICONDUCTORS November 1992 ...

Page 2

... NXP Semiconductors PNP 5 GHz wideband transistor DESCRIPTION PNP transistor in a plastic SOT23 envelope primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high ...

Page 3

... NXP Semiconductors PNP 5 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I DC collector current C I peak collector current CM P total power dissipation tot T storage temperature ...

Page 4

... NXP Semiconductors PNP 5 GHz wideband transistor CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO h DC current gain FE f transition frequency T C collector capacitance c C emitter capacitance e C feedback capacitance re G maximum unilateral power gain UM (note 1) F noise figure ...

Page 5

... NXP Semiconductors PNP 5 GHz wideband transistor handbook, halfpage L3 390 Ω 3.9 kΩ 300 Ω 680 pF 75 Ω H Ferroxcube choke, catalogue number 3122 108 20150 turns 0.35 mm copper wire; winding pitch 1 mm; internal diameter 4 mm. Fig.2 Intermodulation distortion test circuit. 1 handbook, halfpage ...

Page 6

... NXP Semiconductors PNP 5 GHz wideband transistor 5 handbook, halfpage F (dB  opt 500 MHz Fig.6 Minimum noise figure as a function of collector current. November 1992 MEA921 handbook, halfpage (mA C. amb (dB – 2 mA   opt amb Fig.7 Minimum noise figure as a function of frequency. ...

Page 7

... NXP Semiconductors PNP 5 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 November 1992 scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

Page 8

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 9

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 10

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

Related keywords