BFR520T/R NXP Semiconductors, BFR520T/R Datasheet - Page 6

• Manufacturer Part Number: BFR520T/R
• Description: Trans GP BJT NPN 15V 0.07A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of BFR520T/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 60@20mA@6V
• Maximum Operating Frequency: 9000(Typ) MHz
• Maximum Dc Collector Current: 0.07 A
• Maximum Collector Base Voltage: 20 V
• Maximum Collector Emitter Voltage: 15 V
• Maximum Emitter Base Voltage: 2.5 V

Philips Semiconductors
9397 750 13397
Product data sheet
Fig 7. Gain as a function of frequency; I
Fig 9. Minimum noise figure and associated available
gain
(dB)
F
(dB)
min
50
40
10
30
20
0
5
4
3
2
1
0
V
V
gain as functions of collector current.
10
1
CE
CE
2000
1000
900
500
= 6 V; I
= 6 V.
MSG
G
UM
F
min
C
= 5 mA.
10
2
10
G
ass
10
f (MHz)
3
I
C
1000
900
2000
(mA)
f (MHz)
G
max
C
mra708
mra714
= 5 mA.
Rev. 03 — 1 September 2004
10
10
4
20
15
10
0
5
2
5
G
(dB)
ass
Fig 8. Gain as a function of frequency; I
Fig 10. Minimum noise figure and associated available
gain
(dB)
F
(dB)
min
50
40
30
20
10
0
5
4
3
2
1
0
10
V
V
gain as functions of frequency.
10
CE
CE
2
= 6 V; I
= 6 V.
MSG
G
20
5
UM
F
I
min
C
(mA)
C
= 20 mA.
10
NPN 9 GHz wideband transistor
5
2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
20
10
3
G
ass
10
3
f (MHz)
f (MHz)
G
BFR520
max
C
mra709
mra715
= 20 mA.
10
10
4
15
20
10
5
0
4
5
G
(dB)
ass
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