BFQ540T/R NXP Semiconductors, BFQ540T/R Datasheet - Page 2

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BFQ540T/R

Manufacturer Part Number
BFQ540T/R
Description
Trans GP BJT NPN 15V 0.12A 4-Pin(3+Tab) SOT-89 T/R
Manufacturer
NXP Semiconductors
Type
NPNr
Datasheet

Specifications of BFQ540T/R

Package
4SOT-89
Supplier Package
SOT-89
Pin Count
4
Minimum Dc Current Gain
100@40mA@8V
Maximum Operating Frequency
9000(Typ) MHz
Maximum Dc Collector Current
0.12 A
Maximum Collector Base Voltage
20 V
Maximum Collector Emitter Voltage
15 V
Maximum Emitter Base Voltage
2 V
NXP Semiconductors
FEATURES
APPLICATIONS
QUICK REFERENCE DATA
Note
1. T
V
V
V
I
P
h
f
F
SYMBOL
C
T
s
FE
High gain
High output voltage
Low noise
Gold metallization ensures
excellent reliability
Low thermal resistance.
VHF, UHF and CATV amplifiers.
CBO
CES
EBO
tot
NPN wideband transistor
21
s
2
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
collector-base voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
insertion power gain
noise figure
PARAMETER
DESCRIPTION
NPN wideband transistor in a SOT89
plastic package.
PINNING
PIN
1
2
3
Rev. 04 - 25 September 2007
open emitter
R
open collector
T
I
I
T
I
f = 900 MHz; T
I
f = 900 MHz;
C
C
C
C
emitter
collector
base
s
amb
BE
= 40 mA; V
= 40 mA; V
= 40 mA; V
= 40 mA; V
= 0
60 C; note 1
= 25 C
DESCRIPTION
CONDITIONS
CE
CE
CE
CE
amb
S
=
= 8 V; T
= 8 V; f = 1 GHz;
= 8 V;
= 8 V;
= 25 C
opt
j
= 25 C
Marking code: N4.
100
12
MIN.
Fig.1 SOT89.
120
9
13
1.9
3
TYP.
Product specification
2
20
15
2
120
1.2
250
2.4
MAX.
BFQ540
1
2 of 8
V
V
V
mA
W
GHz
dB
dB
UNIT

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