BC857BST/R NXP Semiconductors, BC857BST/R Datasheet - Page 3

• Manufacturer Part Number: BC857BST/R
• Description: Trans GP BJT PNP 45V 0.1A 6-Pin SOT-363 T/R
• Manufacturer: NXP Semiconductors
• Type: PNPr

Specifications of BC857BST/R

• Package: 6SOT-363
• Supplier Package: SOT-363
• Pin Count: 6
• Minimum Dc Current Gain: 200@2mA@5V
• Maximum Operating Frequency: 100(Min) MHz
• Maximum Dc Collector Current: 0.1 A
• Maximum Base Emitter Saturation Voltage: 0.755(Typ)@0.5mA@10mA V
• Maximum Collector Emitter Saturation Voltage: 0.1@0.5mA@10mA|0.4@5mA@100mA V
• Maximum Collector Base Voltage: 50 V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 5 V

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 26
Per device
R
Per transistor
I
I
h
V
V
V
C
C
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
BE
PNP general purpose double transistor
th j-a
c
e
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
p
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
C
C
E
C
C
= 0; V
= 0; V
= 0; V
= −2 mA; V
= −10 mA; I
= −100 mA; I
= −10 mA; I
= 2 mA; V
= i
= i
= −10 mA; V
e
c
= 0; V
= 0; V
CB
CB
EB
3
= −30 V
= −30 V; T
= −5 V
CONDITIONS
CB
EB
CE
CE
B
B
CE
B
= −10 V; f = 1 MHz
= −500 mV; f = 1 MHz
= −0.5 mA
= −0.5 mA
note 1
= −5 V
= −5 V
= −5 mA; note 1
= −5 V; f = 100 MHz 100
CONDITIONS
j
= 150 °C
−
−
−
200
−
−
−
−600
−
−
MIN.
VALUE
416
−
−
−
−
−
−
−755
−655
−
10
−
TYP.
Product data sheet
BC857BS
−15
−5
−100
450
−100
−400
−
−750
2.2
−
−
MAX. UNIT
UNIT
K/W
nA
μA
nA
mV
mV
mV
mV
pF
pF
MHz