BC857AT/R NXP Semiconductors, BC857AT/R Datasheet - Page 2

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BC857AT/R

Manufacturer Part Number
BC857AT/R
Description
Trans GP BJT PNP 45V 0.1A 3-Pin TO-236AB T/R
Manufacturer
NXP Semiconductors
Type
PNPr
Datasheet

Specifications of BC857AT/R

Package
3TO-236AB
Supplier Package
TO-236AB
Pin Count
3
Minimum Dc Current Gain
125@2mA@5V
Maximum Operating Frequency
100(Min) MHz
Maximum Dc Collector Current
0.1 A
Maximum Base Emitter Saturation Voltage
0.7(Typ)@0.5mA@10mA|0.85(Typ)@5mA@100mA V
Maximum Collector Emitter Saturation Voltage
0.3@0.5mA@10mA|0.65@5mA@100mA V
Maximum Collector Base Voltage
50 V
Maximum Collector Emitter Voltage
45 V
Maximum Emitter Base Voltage
5 V
NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complements: BC846, BC847 and BC848.
MARKING
Note
1. * = p: made in Hong Kong.
ORDERING INFORMATION
2004 Jan 16
BC856
BC856A
BC856B
BC857
BC857A
BC857B
BC857C
BC858B
BC856
BC857
BC858
PNP general purpose transistors
NUMBER
* = t: made in Malaysia.
* = W: made in China.
TYPE
TYPE NUMBER
NAME
MARKING CODE
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
3D*
3H*
3G*
3A*
3B*
3E*
3F*
3K*
(1)
DESCRIPTION
2
PINNING
PACKAGE
handbook, halfpage
Fig.1 Simplified outline (SOT23) and symbol.
PIN
Top view
1
2
3
1
base
emitter
collector
BC856; BC857; BC858
3
DESCRIPTION
2
MAM256
Product data sheet
1
VERSION
SOT23
SOT23
SOT23
3
2

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