BC807-40T/R NXP Semiconductors, BC807-40T/R Datasheet - Page 9

• Manufacturer Part Number: BC807-40T/R
• Description: Trans GP BJT PNP 45V 0.5A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: PNPr

Specifications of BC807-40T/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 250@100mA@1V|40@500mA@1V
• Maximum Operating Frequency: 80(Min) MHz
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Emitter Saturation Voltage: 0.7@50mA@500mA V
• Maximum Collector Base Voltage: 50 V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 5 V

NXP Semiconductors
BC807_BC807W_BC327_6
Product data sheet
Fig 10. Selection -16: Collector current as a function
(10) I
(A)
I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
−1.2
−0.8
−0.4
C
0
0
T
of collector-emitter voltage; typical values
B
B
B
B
B
B
B
B
B
B
amb
= −16.0 mA
= −14.4 mA
= −12.8 mA
= −11.2 mA
= −9.6 mA
= −8.0 mA
= −6.4 mA
= −4.8 mA
= −3.2 mA
= −1.6 mA
= 25 °C
−1
−2
−3
(3)
−4
006aaa128
(2)
V
CE
(10)
(V)
(1)
(4)
(5)
(6)
(7)
(8)
(9)
Rev. 06 — 17 November 2009
−5
Fig 11. Selection -25: Collector current as a function
BC807; BC807W; BC327
(10) I
(A)
I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
−1.2
−0.8
−0.4
C
45 V, 500 mA PNP general-purpose transistors
0
0
T
of collector-emitter voltage; typical values
B
B
B
B
B
B
B
B
B
B
amb
= −13.0 mA
= −11.7 mA
= −10.4 mA
= −9.1 mA
= −7.8 mA
= −6.5 mA
= −5.2 mA
= −3.9 mA
= −2.6 mA
= −1.3 mA
= 25 °C
−1
−2
−3
(3)
© NXP B.V. 2009. All rights reserved.
−4
006aaa129
V
(2)
CE
(10)
(V)
(1)
(4)
(5)
(6)
(7)
(8)
(9)
−5
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