BC807-40T/R NXP Semiconductors, BC807-40T/R Datasheet - Page 6
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BC807-40T/R
Manufacturer Part Number
BC807-40T/R
Description
Trans GP BJT PNP 45V 0.5A 3-Pin TO-236AB T/R
Manufacturer
NXP Semiconductors
Type
PNPr
Datasheet
1.BC807-25235.pdf
(19 pages)
Specifications of BC807-40T/R
Package
3TO-236AB
Supplier Package
TO-236AB
Pin Count
3
Minimum Dc Current Gain
250@100mA@1V|40@500mA@1V
Maximum Operating Frequency
80(Min) MHz
Maximum Dc Collector Current
0.5 A
Maximum Collector Emitter Saturation Voltage
0.7@50mA@500mA V
Maximum Collector Base Voltage
50 V
Maximum Collector Emitter Voltage
45 V
Maximum Emitter Base Voltage
5 V
NXP Semiconductors
BC807_BC807W_BC327_6
Product data sheet
Fig 1.
Fig 3.
h
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
300
200
100
−10
0
V
Selection -16: DC current gain as a function of
collector current; typical values
V
Selection -40: DC current gain as a function of collector current; typical values
−1
CE
amb
amb
amb
CE
amb
amb
amb
= −1 V
= −1 V
= 150 °C
= 25 °C
= −55 °C
= 150 °C
= 25 °C
= −55 °C
−1
(1)
(2)
(3)
−10
h
FE
800
600
400
200
−10
−10
0
2
−1
I
006aaa119
C
(mA)
Rev. 06 — 17 November 2009
−10
−1
3
(1)
(2)
(3)
−10
Fig 2.
BC807; BC807W; BC327
h
(1) T
(2) T
(3) T
FE
45 V, 500 mA PNP general-purpose transistors
600
400
200
−10
−10
0
V
Selection -25: DC current gain as a function of
collector current; typical values
2
−1
amb
amb
amb
CE
I
006aaa121
C
(mA)
= −1 V
= 150 °C
= 25 °C
= −55 °C
−10
−1
3
(1)
(2)
(3)
−10
−10
© NXP B.V. 2009. All rights reserved.
2
I
006aaa120
C
(mA)
−10
3
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