BCR133E6327XT Infineon Technologies, BCR133E6327XT Datasheet

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BCR133E6327XT

Manufacturer Part Number
BCR133E6327XT
Description
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R
Manufacturer
Infineon Technologies
Type
NPNr
Datasheet

Specifications of BCR133E6327XT

Package
3SOT-23
Configuration
Single
Minimum Dc Current Gain
30@5mA@5V
Peak Dc Collector Current
100 mA
Maximum Collector Emitter Saturation Voltage
0.3@0.5mA@10mA V
Maximum Collector Emitter Voltage
50 V
Maximum Processing Temperature
260 °C
Transistor Polarity
NPN
Collector-emitter Voltage
50V
Dc Current Gain (min)
30
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / Rohs Status
Compliant
NPN Silicon Digital Transistor
BCR133/W/F
Type
BCR133
BCR133F
BCR133S
BCR133W
1
Pb-containing package may be available upon special request
Switching in circuit, inverter, interface circuit,
Built in bias resistor (R
BCR133S: Two internally isolated
BCR133S: For orientation in reel see
Pb-free (RoHS compliant) package
Qualified according AEC Q101
drive circuit
transistors with good matching
in one multichip package
package information below
1
B
R
1
R
2
C
3
E
EHA07184
2
BCR133S
TR1
C1
E1
6
1
R
R
2
1
1
B2
B1
5
2
R
R
1
= 10 k , R
2
E2
C2
4
3
EHA07174
TR2
Marking
WCs
WCs
WCs
WCs
2
1)
1=B
1=B
1=E1
1=B
= 10 k )
2=E
2=E
2=B1
2=E
1
Pin Configuration
3=C
3=C
3=C2
3=C
-
-
4=E2
-
-
-
5=B2
-
-
-
6=C1
-
BCR133...
Package
SOT23
TSFP-3
SOT363
SOT323
2007-09-17

Related parts for BCR133E6327XT

BCR133E6327XT Summary of contents

Page 1

NPN Silicon Digital Transistor Switching in circuit, inverter, interface circuit, drive circuit Built in bias resistor ( BCR133S: Two internally isolated transistors with good matching in one multichip package BCR133S: For orientation in reel ...

Page 2

Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Input forward voltage Input reverse voltage Collector current Total power dissipation- BCR133, T 102°C S BCR133S, T 115°C S BCR133W, T 124°C S BCR133F, T tbd S Junction temperature Storage temperature Thermal Resistance ...

Page 3

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage I = 100 µ Collector-base breakdown voltage µ Collector-base cutoff current ...

Page 4

DC current gain (common emitter configuration -40 °C -25 °C 25 °C 85 °C 125 ° Input on ...

Page 5

Total power dissipation P BCR133 300 mW 250 225 200 175 150 125 100 Total power dissipation P BCR133S 300 mW 250 225 200 175 150 125 100 75 50 ...

Page 6

Permissible Pulse Load R BCR133 0.5 0.2 0.1 0.05 0. 0.01 0.005 Permissible Puls Load R thJS BCR133F ...

Page 7

Permissible Puls Load R thJS BCR133S 0.5 0.2 0.1 0.05 0. 0.01 0.005 Permissible Puls Load R thJS ...

Page 8

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

Page 9

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT323 2 ±0.2 0.1 MAX. +0.1 3x 0.3 -0.05 0 0.65 0.65 0.2 0.6 ...

Page 10

Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...

Page 11

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package TSFP-3 1.2 ±0.05 0.2 0.55 ±0.05 ±0. 0.2 0.15 ±0.05 0.4 ±0.05 0.4 ...

Page 12

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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