PUMH9T/R NXP Semiconductors, PUMH9T/R Datasheet - Page 2

• Manufacturer Part Number: PUMH9T/R
• Description: Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R
• Manufacturer: NXP Semiconductors
• Type: NPNr

Specifications of PUMH9T/R

• Package: 6SOT-363
• Configuration: Dual
• Minimum Dc Current Gain: 100@5mA@5V
• Peak Dc Collector Current: 100 mA
• Maximum Collector Emitter Saturation Voltage: 0.1@0.25mA@5mA V
• Maximum Collector Emitter Voltage: 50 V
• Maximum Processing Temperature: 260 °C

NXP Semiconductors
FEATURES
• Built-in bias resistors
• Simplifies circuit design
• Reduces component count
• Reduces pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
2004 Apr 14
PEMH9
PIMH9
PUMH9
PEMH9
PIMH9
PUMH9
TYPE NUMBER
TYPE NUMBER
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
* = t: Made in Malaysia.
* = W: Made in China.
PHILIPS
SOT666
SOT457
SOT363
PACKAGE
handbook, halfpage
Top view
SC-74
SC-88
EIAJ
SIMPLIFIED OUTLINE AND SYMBOL
6
1
−
5
2
MARKING CODE
3
4
MHC049
H*9
H9
H9
(1)
2
TR1
QUICK REFERENCE DATA
DESCRIPTION
NPN/NPN resistor-equipped transistor (see “Simplified
outline, symbol and pinning” for package details).
6
1
V
I
TR1
TR2
R1
R2
SYMBOL
O
CEO
R1
R2
5
2
PEMB9
−
PUMB9
R2
R1
collector-emitter
voltage
output current (DC)
NPN
NPN
bias resistor
bias resistor
COMPLEMENT
PARAMETER
PNP/PNP
4
TR2
3
PIMH9; PUMH9;
PIN
PEMD9
−
PUMD9
−
−
−
−
10
47
1
2
3
4
5
6
TYP.
Product data sheet
COMPLEMENT
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collectorTR1
PINNING
NPN/PNP
DESCRIPTION
50
100
−
−
−
−
MAX.
PEMH9
V
mA
−
−
kΩ
kΩ
UNIT