PUMH11T/R NXP Semiconductors, PUMH11T/R Datasheet - Page 8

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PUMH11T/R

Manufacturer Part Number
PUMH11T/R
Description
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R
Manufacturer
NXP Semiconductors
Type
NPNr
Datasheet

Specifications of PUMH11T/R

Package
6SOT-363
Configuration
Dual
Minimum Dc Current Gain
30@5mA@5V
Peak Dc Collector Current
100 mA
Maximum Collector Emitter Saturation Voltage
0.15@0.5mA@10mA V
Maximum Collector Emitter Voltage
50 V
Maximum Processing Temperature
260 °C
Printed in The Netherlands
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
R75/05/pp8
Date of release: 2003 Oct 20
Document order number: 9397 750 11875

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