PUMD3T/R NXP Semiconductors, PUMD3T/R Datasheet - Page 9

• Manufacturer Part Number: PUMD3T/R
• Description: Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R
• Manufacturer: NXP Semiconductors
• Type: NPN|PNPr

Specifications of PUMD3T/R

• Package: 6SOT-363
• Configuration: Dual
• Minimum Dc Current Gain: 30@5mA@5V
• Peak Dc Collector Current: 100 mA
• Maximum Collector Emitter Saturation Voltage: 0.15@0.5mA@10mA V
• Maximum Collector Emitter Voltage: 50 V
• Maximum Processing Temperature: 260 °C

NXP Semiconductors
10. Revision history
Table 10.
PEMD3_PIMD3_PUMD3_10
Product data sheet
Document ID
PEMD3_PIMD3_ PUMD3_10 20091115
Modifications:
PEMD3_PIMD3_ PUMD3_9
PEMD3_PIMD3_ PUMD3_8
Revision history
Release date
20050518
20041206
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 9 “Package outline SOT363
Rev. 10 — 15 November 2009
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
Data sheet status
Product data sheet
Product data sheet
Product data sheet
PEMD3; PIMD3; PUMD3
(SC-88)”: updated
Change notice
-
-
-
Supersedes
PEMD3_PIMD3_ PUMD3_9
PEMD3_PIMD3_ PUMD3_8
PEMD3_PUMD3_7
© NXP B.V. 2009. All rights reserved.
9 of 11