BCV27T/R NXP Semiconductors, BCV27T/R Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BCV27T/R
Manufacturer Part Number
BCV27T/R
Description
Trans Darlington NPN 30V 0.5A 3-Pin TO-236AB T/R
Manufacturer
NXP Semiconductors
Type
NPNr
Datasheet
1.BCV47235.pdf
(7 pages)
Specifications of BCV27T/R
Package
3TO-236AB
Configuration
Single
Peak Dc Collector Current
0.5 A
Maximum Base Emitter Saturation Voltage
1.5@0.1mA@100mA V
Maximum Collector Emitter Saturation Voltage
1@0.1mA@100mA V
Maximum Collector Base Voltage
40 V
Maximum Collector Cut-off Current
0.1 uA
Maximum Collector Emitter Voltage
30 V
Minimum Dc Current Gain
4000@1mA@5V|10000@10mA@5V|20000@100mA@5V
NXP Semiconductors
PACKAGE OUTLINE
2004 Jan 13
NPN Darlington transistors
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
0.1
A
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
JEITA
scale
B
1
5
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
BCV27; BCV47
c
X
Product data sheet
v
ISSUE DATE
M
04-11-04
06-03-16
A
SOT23