BAP70AM,115 NXP Semiconductors, BAP70AM,115 Datasheet - Page 3

• Manufacturer Part Number: BAP70AM,115
• Description: DIODE PIN 50V 100MA 6-UMT
• Manufacturer: NXP Semiconductors
• Type: Attenuatorr

Specifications of BAP70AM,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Diode Type: PIN - 2 Pair Series
• Voltage - Peak Reverse (max): 50V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.25pF @ 20V, 1MHz
• Resistance @ If, F: 1.9 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 300mW
• Configuration: Double Dual Series
• Reverse Voltage: 50 V
• Forward Continuous Current: 100 mA
• Carrier Life: 1.25 us
• Forward Voltage Drop: 1.1 V @ 50 mA
• Maximum Diode Capacitance: 0.25 pF @ 20 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 1.9 Ohm @ 100 mA
• Maximum Series Resistance @ Minimum If: 100 Ohm @ 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 300 mW
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Typical Carrier Life Time: 1.25us
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934059306115; BAP70AM T/R; BAP70AM T/R

NXP Semiconductors
7. Characteristics
Table 6.
T
BAP70AM
Product data sheet
Symbol
V
I
C
r
τ
L
R
D
amb
L
Fig 1.
S
F
d
= 25
(fF)
C
600
500
400
300
200
d
°
0
f = 1 MHz; T
voltage; typical values
Diode capacitance as a function of reverse
C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
diode forward resistance
charge carrier life time
series inductance
5
j
= 25 °C.
10
15
Conditions
I
V
see
see
when switched from I
I
I
I
F
R
R
F
R
All information provided in this document is subject to legal disclaimers.
V
V
V
V
I
I
I
I
= 50 mA
= 100 mA; f = 100 MHz
= 6 mA; R
= 3 mA
F
F
F
F
001aaa461
V
= 50 V
R
R
R
R
R
Figure
Figure
= 0.5 mA
= 1 mA
= 10 mA
= 100 mA
= 0 V
= 1 V
= 5 V
= 20 V
(V)
Rev. 2 — 7 September 2010
20
1; f = 1 MHz;
2; f = 100 MHz;
L
= 100 Ω; measured at
F
= 10 mA to
Fig 2.
(Ω)
r
10
10
D
10
10
1
3
2
f = 100 MHz; T
Diode forward resistance as a function of
forward current; typical values
−1
1
j
= 25 °C.
Min
-
-
-
-
-
-
-
-
-
-
-
-
Silicon PIN diode array
Typ
0.9
-
570
400
270
200
77
40
5.4
1.4
1.25
0.6
10
BAP70AM
© NXP B.V. 2010. All rights reserved.
I
F
(mA)
Max
1.1
< 100
-
-
-
250
100
50
7
1.9
-
-
mce007
10
2
Unit
V
nA
fF
fF
fF
fF
Ω
Ω
Ω
Ω
μs
nH
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