BAP51-04W,115 NXP Semiconductors, BAP51-04W,115 Datasheet - Page 4

• Manufacturer Part Number: BAP51-04W,115
• Description: DIODE PIN GP 50V 50MA SOT-323
• Manufacturer: NXP Semiconductors

Specifications of BAP51-04W,115

• Package / Case: SC-70-3, SOT-323-3
• Diode Type: PIN - 1 Pair Series Connection
• Voltage - Peak Reverse (max): 50V
• Current - Max: 50mA
• Capacitance @ Vr, F: 0.35pF @ 5V, 1MHz
• Resistance @ If, F: 2.5 Ohm @ 10mA, 100MHz
• Power Dissipation (max): 240mW
• Configuration: Dual Series
• Reverse Voltage: 50 V
• Forward Continuous Current: 50 mA
• Carrier Life: 0.55 us
• Forward Voltage Drop: 1.1 V
• Maximum Diode Capacitance: 0.35 pF @ 5 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 2.5 Ohm @ 10 mA
• Maximum Series Resistance @ Minimum If: 9 Ohm @ 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 240 mW
• Forward Current: 50mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Package Type: SC-70
• Mounting: Surface Mount
• Typical Carrier Life Time: 550ns
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056539115; BAP51-04W T/R; BAP51-04W T/R

Philips Semiconductors
GRAPHICAL DATA
2002 Feb 19
handbook, halfpage
handbook, halfpage
General purpose PIN diode
f = 100 MHz; T
Fig.2
(1) I
(2) I
(3) I
Diode inserted in series with a 50 Ω stripline circuit and biased via the
analyzer Tee network. T
Fig.4
|S 21 |
(dB)
−0.5
−2.5
−1.5
(Ω)
10
r D
10
−2
−1
F
F
F
10
2
−1
0
10
1
2
= 10 mA.
= 1 mA
= 0.5 mA
0.5
−1
Forward resistance as a function of forward
current; typical values.
Insertion loss (|s
function of frequency; typical values.
j
= 25 ° C.
1
amb
1
(1)
1.5
= 25 ° C.
(2)
21
|
2
(3)
) of the diode as a
2
10
2.5
I F (mA)
f (GHz)
MGS659
MLD507
10
3
2
4
handbook, halfpage
handbook, halfpage
f = 100 MHz; T
Fig.3
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
T
Fig.5
s 21
amb
(dB)
(fF)
500
C d
400
300
200
100
−10
−20
−30
−40
−50
= 25 ° C.
2
0
0
0.5
0
Diode capacitance as a function of reverse
voltage; typical values.
Isolation (|s
frequency; typical values.
j
= 25 ° C.
4
1
21
|
1.5
2
8
) of the diode as a function of
12
2
Preliminary specification
BAP51-04W
2.5
16
V R (V)
f (GHz)
MLD508
MLD509
20
3