BAP51-04W,115 NXP Semiconductors, BAP51-04W,115 Datasheet

DIODE PIN GP 50V 50MA SOT-323

BAP51-04W,115

Manufacturer Part Number
BAP51-04W,115
Description
DIODE PIN GP 50V 50MA SOT-323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAP51-04W,115

Package / Case
SC-70-3, SOT-323-3
Diode Type
PIN - 1 Pair Series Connection
Voltage - Peak Reverse (max)
50V
Current - Max
50mA
Capacitance @ Vr, F
0.35pF @ 5V, 1MHz
Resistance @ If, F
2.5 Ohm @ 10mA, 100MHz
Power Dissipation (max)
240mW
Configuration
Dual Series
Reverse Voltage
50 V
Forward Continuous Current
50 mA
Carrier Life
0.55 us
Forward Voltage Drop
1.1 V
Maximum Diode Capacitance
0.35 pF @ 5 V
Maximum Operating Temperature
+ 150 C
Maximum Series Resistance @ Maximum If
2.5 Ohm @ 10 mA
Maximum Series Resistance @ Minimum If
9 Ohm @ 0.5 mA
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
240 mW
Forward Current
50mA
Forward Voltage
1.1V
Operating Temperature Classification
Military
Package Type
SC-70
Mounting
Surface Mount
Typical Carrier Life Time
550ns
Operating Temperature (max)
150C
Operating Temperature (min)
-65C
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056539115
BAP51-04W T/R
BAP51-04W T/R
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D102
BAP51-04W
General purpose PIN diode
Preliminary specification
2002 Feb 19

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BAP51-04W,115 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage BAP51-04W General purpose PIN diode Preliminary specification M3D102 2002 Feb 19 ...

Page 2

... T junction temperature j 2002 Feb 19 PINNING PIN handbook, halfpage 1 Top view Marking code: W6- Fig.1 Simplified outline (SOT323) and symbol. CONDITIONS = 90 ° Preliminary specification BAP51-04W DESCRIPTION anode cathode common connection MAM391 MIN. MAX. UNIT − − − 240 mW −65 °C +150 − ...

Page 3

... MHz; note mA 100 MHz; note mA 100 MHz; note 1 F when switched from 100 Ω mA measured mA 100 MHz F PARAMETER 3 Preliminary specification BAP51-04W MIN. TYP. MAX. UNIT − 0.95 1.1 V − − − − 100 nA − − 0.4 pF − 0.3 0.55 pF − ...

Page 4

... Diode capacitance as a function of reverse voltage; typical values (dB) −10 −20 −30 −40 −50 0.5 1 1.5 2 Diode zero biased and inserted in series with a 50 Ω stripline circuit ° amb | 2 Fig.5 Isolation (| the diode as a function of 21 frequency; typical values. BAP51-04W MLD508 (V) MLD509 2 (GHz) ...

Page 5

... OUTLINE VERSION IEC SOT323 2002 Feb scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC EIAJ SC-70 5 Preliminary specification detail 0.45 0.23 0.2 0.2 0.15 0.13 EUROPEAN PROJECTION BAP51-04W SOT323 ISSUE DATE 97-02-28 ...

Page 6

... Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 6 Preliminary specification BAP51-04W DEFINITIONS ...

Page 7

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited ...

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