BAP65-05W,115 NXP Semiconductors, BAP65-05W,115 Datasheet - Page 4

• Manufacturer Part Number: BAP65-05W,115
• Description: DIODE PIN 30V 100MA SOT-323
• Manufacturer: NXP Semiconductors

Specifications of BAP65-05W,115

• Package / Case: SC-70-3, SOT-323-3
• Diode Type: PIN - 1 Pair Common Cathode
• Voltage - Peak Reverse (max): 30V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.425pF @ 20V, 1MHz
• Resistance @ If, F: 350 mOhm @ 100mA, 100MHz
• Power Dissipation (max): 240mW
• Configuration: Dual Common Cathode
• Reverse Voltage: 30 V
• Forward Continuous Current: 100 mA
• Carrier Life: 0.17 us
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.8 pF at 3 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 0.9 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 0.95 Ohms at 5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 240 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1939-2; 934056549115; BAP65-05W T/R

NXP Semiconductors
BAP65-05W
Product data sheet
Fig 1.
Fig 3.
|s
(dB)
21
−0.1
−0.2
−0.3
−0.4
−0.5
(1) I
(2) I
(3) I
(4) I
(Ω)
10
|
r
2
D
10
−1
0
10
1
f = 100 MHz; T
current; typical values
0
Diode inserted in series with a 50  stripline circuit and
biased via the analyzer Tee network. T
Insertion loss (s
a function of frequency; typical values
Forward resistance as a function of forward
−1
F
F
F
F
= 100 mA
= 10 mA
= 5 mA
= 1 mA
(1)
j
1
1
= 25 C
(3)
(2)
21

2
) of the diode in on-state as
(4)
10
2
f (GHz)
I
All information provided in this document is subject to legal disclaimers.
F
(mA)
amb
mgw099
mgw097
= 25 C.
Rev. 2 — 27 September 2010
10
3
2
Fig 2.
Fig 4.
(fF)
|s
C
(dB)
21
d
1000
800
600
400
200
−10
−20
−30
−40
|
2
0
0
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
0
Diode zero biased and inserted in series with a 50 
stripline circuit. T
Isolation (s
function of frequency; typical values
4
j
= 25 C
21
1

2
amb
) of the diode in off-state as a
8
= 25 C.
BAP65-05W
12
2
© NXP B.V. 2010. All rights reserved.
Silicon PIN diode
16
f (GHz)
V
mgw098
mgw100
R
(V)
20
3
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