1PS76SB17,115 NXP Semiconductors, 1PS76SB17,115 Datasheet - Page 4

• Manufacturer Part Number: 1PS76SB17,115
• Description: DIODE SCHOTTKY 4V 30MA SC76
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of 1PS76SB17,115

• Package / Case: SC-76, SOD-323, UMD2
• Diode Type: Schottky - Single
• Voltage - Peak Reverse (max): 4V
• Current - Max: 30mA
• Capacitance @ Vr, F: 0.65pF @ 0.5V, 1MHz
• Product: Schottky Diodes
• Peak Reverse Voltage: 4 V
• Forward Continuous Current: 0.03 A
• Configuration: Single
• Forward Voltage Drop: 0.6 V @ 0.01 A
• Maximum Reverse Leakage Current: 0.25 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Resistance @ If, F: -
• Power Dissipation (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power Dissipation (max): -
• Resistance @ If, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1PS76SB17 T/R; 1PS76SB17 T/R; 934045400115

Philips Semiconductors
9397 750 14587
Product data sheet
Fig 1. Forward current as a function of forward
Fig 3. Diode capacitance as a function of reverse voltage; typical values.
(mA)
(1) T
(2) T
(3) T
(4) T
I
10
10
F
10
10
1
2
1
2
voltage; typical values.
T
0
amb
amb
amb
amb
amb
= 150 C
= 85 C
= 25 C
= 40 C
= 25 C; f = 1 MHz
0.2
(1)
(2)
0.4
(3)
(4)
(pF)
C
0.8
0.7
0.6
0.5
0.4
d
0.6
0
006aaa077
V
F
(V)
0.8
1
Rev. 06 — 4 April 2005
2
Fig 2. Reverse current as a function of reverse
(nA)
I
R
(1) T
(2) T
(3) T
(4) T
10
10
10
10
10
10
10
10
1
5
4
3
2
1
2
3
3
voltage; typical values.
0
amb
amb
amb
amb
V
R
4 V, 30 mA low C
= 150 C
= 85 C
= 25 C
= 40 C
mlc797
(V)
4
1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
2
(1)
(2)
(3)
(4)
d
Schottky barrier diode
1PSxSB17
3
V
006aaa078
R
(V)
4
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