MBD301G ON Semiconductor, MBD301G Datasheet - Page 3

• Manufacturer Part Number: MBD301G
• Description: DIODE SCHOTTKY DET/SW 30V TO92-2
• Manufacturer: ON Semiconductor

Specifications of MBD301G

• Diode Type: Schottky - Single
• Voltage - Peak Reverse (max): 30V
• Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz
• Power Dissipation (max): 280mW
• Package / Case: TO-92-2, TO-226AC
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Configuration: Single
• Forward Voltage Drop: 0.6 V @ 0.01 A
• Maximum Reverse Leakage Current: 0.2 uA @ 25 V
• Operating Temperature Range: - 55 C to + 150 C
• Mounting Style: Through Hole
• Package Type: TO-92 (TO-226AC)
• Power Dissipation: 280 mW
• Primary Type: Schottky Barrier
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -55 to +125 °C
• Voltage, Forward: 0.52 V
• Voltage, Reverse: 30 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Max: -
• Resistance @ If, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBD301GOS

0.001
0.01
2.8
2.4
2.0
1.6
1.2
0.8
0.4
1.0
0.1
10
0
0
0
3.0
GENERATOR
SINUSOIDAL
T
6.0
6.0
A
75°C
25°C
Figure 1. Total Capacitance
= 100°C
Figure 3. Reverse Leakage
V
V
R
R
, REVERSE VOLTAGE (VOLTS)
, REVERSE VOLTAGE (VOLTS)
9.0
12
12
15
TYPICAL ELECTRICAL CHARACTERISTICS
I
Figure 5. Krakauer Method of Measuring Lifetime
F(PEAK)
18
18
21
NETWORK
BALLAST
(PADS)
f = 1.0 MHz
24
24
http://onsemi.com
27
I
R(PEAK)
CONDUCTION
CONDUCTION
CAPACITIVE
FORWARD
30
30
3
DUT
500
400
300
200
100
100
1.0
0.1
10
0
0.2
0
T
A
10
= 85°C
Figure 2. Minority Carrier Lifetime
PADS
0.4
KRAKAUER METHOD
20
Figure 4. Forward Voltage
V
F
I
F
, FORWARD VOLTAGE (VOLTS)
, FORWARD CURRENT (mA)
30
T
T
A
A
40
= 25°C
0.6
= - 40°C
50
CONDUCTION
STORAGE
60
0.8
OSCILLOSCOPE
(50 W INPUT)
SAMPLING
70
80
1.0
90
100
1.2