MBD301G ON Semiconductor, MBD301G Datasheet
MBD301G
Manufacturer Part Number
MBD301G
Description
DIODE SCHOTTKY DET/SW 30V TO92-2
Manufacturer
ON Semiconductor
Specifications of MBD301G
Diode Type
Schottky - Single
Voltage - Peak Reverse (max)
30V
Capacitance @ Vr, F
1.5pF @ 15V, 1MHz
Power Dissipation (max)
280mW
Package / Case
TO-92-2, TO-226AC
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Configuration
Single
Forward Voltage Drop
0.6 V @ 0.01 A
Maximum Reverse Leakage Current
0.2 uA @ 25 V
Operating Temperature Range
- 55 C to + 150 C
Mounting Style
Through Hole
Package Type
TO-92 (TO-226AC)
Power Dissipation
280 mW
Primary Type
Schottky Barrier
Temperature, Junction, Maximum
+125 °C
Temperature, Operating
-55 to +125 °C
Voltage, Forward
0.52 V
Voltage, Reverse
30 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Max
-
Resistance @ If, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBD301GOS
MBD301, MMBD301LT1
Silicon Hot−Carrier Diodes
SCHOTTKY Barrier Diodes
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2007
Reverse Voltage
Total Device Dissipation
@ T
Derate above 25°C
Operating Junction
Temperature Range
Storage Temperature Range
These devices are designed primarily for high−efficiency UHF and
Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
Very Low Capacitance − 1.5 pF (Max) @ V
Low Reverse Leakage − I
Pb−Free Packages are Available
A
= 25°C
Rating
Preferred Device
R
Symbol
= 13 nAdc (Typ) MBD301, MMBD301
T
V
P
T
stg
R
F
J
MBD301
280
2.8
−55 to +125
−55 to +150
Value
R
MMBD301LT1
30
= 15 V
200
2.0
1
mW/°C
Unit
mW
°C
°C
V
(Note: Microdot may be in either location)
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
DETECTOR AND SWITCHING
A
Y
WW
G
1
2
(Note: Microdot may be in either location)
SILICON HOT−CARRIER
2
ORDERING INFORMATION
3
M
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
CATHODE
CATHODE
MMBD301LT1
2
3
30 VOLTS
CASE 318
(TO−226AC)
(TO−236)
= Date Code
= Pb−Free Package
DIODES
STYLE 8
SOT−23
CASE 182
MBD301
STYLE 1
TO−92
ANODE
ANODE
1
1
1
MARKING
DIAGRAM
MARKING
DIAGRAM
4T M G
AYWWG
MBD
G
301
G
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MBD301G Summary of contents
Page 1
MBD301, MMBD301LT1 Preferred Device Silicon Hot−Carrier Diodes SCHOTTKY Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an ...
Page 2
... Figure 4 F Forward Voltage ( mAdc) Figure 4 F ORDERING INFORMATION Device MBD301 MBD301G MMBD301LT1 MMBD301LT1G MMBD301LT3 MMBD301LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MBD301, MMBD301LT1 (T = 25° ...
Page 3
... 0.037 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MBD301, MMBD301LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...