BAP51L,315 NXP Semiconductors, BAP51L,315 Datasheet - Page 2

• Manufacturer Part Number: BAP51L,315
• Description: DIODE PIN 60V 100MA SOD-882
• Manufacturer: NXP Semiconductors

Specifications of BAP51L,315

• Package / Case: SOD-882
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 60V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
• Resistance @ If, F: 1.5 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 500mW
• Configuration: Single
• Reverse Voltage: 60 V
• Forward Continuous Current: 100 mA
• Frequency Range: SHF
• Termination Style: SMD/SMT
• Carrier Life: 0.55 us
• Forward Voltage Drop: 0.95 V
• Maximum Diode Capacitance: 0.4 pF
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 1.5 Ohms at 100 mA
• Maximum Series Resistance @ Minimum If: 9 Ohms at 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 500 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1924-2; 934057771315; BAP51L T/R

Philips Semiconductors
4. Marking
5. Limiting values
6. Thermal characteristics
7. Characteristics
9397 750 14554
Product data sheet
Table 3:
Table 4:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5:
Table 6:
T
Type number
BAP51L
Symbol
V
I
P
T
T
Symbol
R
Symbol
V
I
C
r
F
R
D
j
s
stg
j
R
tot
F
th(j-sp)
d
= 25 C unless otherwise specified.
21
2
Parameter
forward voltage
reverse current
diode capacitance
diode forward resistance
isolation
Marking
Limiting values
Thermal characteristics
Electrical characteristics
Parameter
thermal resistance from junction
to solder point
Parameter
reverse voltage
forward current
total power dissipation
storage temperature
junction temperature
Rev. 01 — 11 March 2005
Conditions
I
V
f = 1 MHz; see
f = 100 MHz; see
V
F
R
R
= 50 mA
V
V
V
I
I
I
I
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
F
F
F
F
= 50 V
= 0 V; see
R
R
R
= 0.5 mA
= 1 mA
= 10 mA
= 100 mA
= 0 V
= 1 V
= 5 V
Conditions
T
sp
Conditions
Marking code
E2
= 90 C
Figure 4
Figure 2
Figure 1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Min
-
-
-
65
65
Min
-
-
-
-
-
-
-
-
-
-
-
-
Typ
100
Typ
0.95
-
0.30
0.23
0.17
5.3
3.5
1.4
0.9
19
15
13
Max
60
100
500
+150
+150
Silicon PIN diode
BAP51L
Max
1.1
100
-
0.4
0.3
9
6.5
2.5
1.5
-
-
-
Unit
K/W
Unit
V
mA
mW
C
C
Unit
V
nA
pF
pF
pF
dB
dB
dB
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