BAR 15-1 E6327 Infineon Technologies, BAR 15-1 E6327 Datasheet - Page 2

• Manufacturer Part Number: BAR 15-1 E6327
• Description: DIODE RF DUAL 100V 140MA SOT-23
• Manufacturer: Infineon Technologies

Specifications of BAR 15-1 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Diode Type: PIN - 1 Pair Common Cathode
• Voltage - Peak Reverse (max): 100V
• Current - Max: 140mA
• Capacitance @ Vr, F: 0.5pF @ 50V, 1MHz
• Resistance @ If, F: 12 Ohm @ 10mA, 100MHz
• Power Dissipation (max): 250mW
• Configuration: Dual Common Cathode
• Reverse Voltage: 100 V
• Forward Continuous Current: 140 mA
• Frequency Range: HF
• Carrier Life: 1 us
• Forward Voltage Drop: 1.25 V @ 100 mA
• Maximum Diode Capacitance: 0.5 pF @ 50 V
• Maximum Operating Temperature: + 125 C
• Maximum Series Resistance @ Maximum If: 12 Ohm @ 10 mA
• Maximum Series Resistance @ Minimum If: 4200 Ohm @ 0.01 mA
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BAR 15-1 E6327; BAR15-1E6327INTR; BAR151E6327XT; SP000010163

Electrical Characteristics at T
Parameter
DC Characteristics
Reverse current
V
V
Forward voltage
I
AC Characteristics
Diode capacitance
V
V
Zero bias conductance
V
Forward resistance
I
I
I
I
Charge carrier life time
I
R
I-region width
F
F
F
F
F
F
R
R
R
R
R
L
= 100 mA
= 0.01 mA, f = 100 MHz
= 0.1 mA, f = 100 MHz
= 1 mA, f = 100 MHz
= 10 mA, f = 100 MHz
= 10 mA, I
= 50 V
= 100 V
= 100
= 0 V, f = 100 MHz
= 50 V, f = 1 MHz
= 0 V, f = 100 MHz
R
= 6 mA, measured at I
A
= 25°C, unless otherwise specified
R
= 3 mA,
2
Symbol
I
V
C
g
r
W
R
f
F
P
T
rr
I
min.
300
700
5.5
35
-
-
-
-
-
-
-
-
Values
BAR1.../BAR61...
2600
1000
1.05
0.25
typ.
146
470
0.2
50
55
-
-
8
max.
1000
4200
1.25
100
100
2007-04-19
0.5
0.5
85
12
-
-
-
Unit
nA
V
pF
ns
µm
S