BAP64-02,115 NXP Semiconductors, BAP64-02,115 Datasheet - Page 3

• Manufacturer Part Number: BAP64-02,115
• Description: DIODE PIN 175V 100MA SOD-523
• Manufacturer: NXP Semiconductors

Specifications of BAP64-02,115

• Package / Case: SC-79, SOD-523
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 175V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
• Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 715mW
• Configuration: Single
• Reverse Voltage: 175 V
• Forward Continuous Current: 100 mA
• Frequency Range: SHF
• Carrier Life: 1.55 us
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.35 pF at 20 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 1.35 Ohms at 100 mA
• Maximum Series Resistance @ Minimum If: 40 Ohms at 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 715 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1929-2; 934055512115; BAP64-02 T/R

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
V
I
C
r
L
R
j
R
D
L
S
= 25 C unless otherwise specified.
F
Silicon PIN diode
d
th j-s
SYMBOL
SYMBOL
forward voltage
reverse leakage current
diode capacitance
diode forward resistance
charge carrier life time
series inductance
thermal resistance from junction to soldering point
PARAMETER
PARAMETER
Rev. 06 - 9 January 2008
I
V
V
V
V
V
f = 100 MHz; note 1
when switched from I
I
measured at I
F
R
R
R
R
R
R
I
I
I
I
= 50 mA
= 6 mA; R
F
F
F
F
=175 V
= 20 V
= 0; f = 1 MHz
= 1 V; f = 1 MHz
= 20 V; f = 1 MHz
= 0.5 mA
= 1 mA
= 10 mA
= 100 mA
CONDITIONS
L
R
= 100 ;
= 3 mA
F
= 10 mA to
0.95
0.48
0.35
0.23
20
10
2
0.7
1.55
0.6
TYP.
VALUE
Product specification
85
BAP64-02
1.1
10
1
0.35
40
20
3.8
1.35
MAX.
3 of 7
UNIT
K/W
V
pF
pF
pF
nH
UNIT
A
A
s