BAP65-02,115 NXP Semiconductors, BAP65-02,115 Datasheet - Page 4

• Manufacturer Part Number: BAP65-02,115
• Description: DIODE PIN 30V 100MA SOD-523
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP65-02,115

• Package / Case: SC-79, SOD-523
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 30V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.375pF @ 20V, 1MHz
• Resistance @ If, F: 350 mOhm @ 100mA, 100MHz
• Power Dissipation (max): 715mW
• Configuration: Single
• Reverse Voltage: 30 V
• Forward Continuous Current: 100 mA
• Termination Style: Solder Tails
• Carrier Life: 0.17 us
• Forward Voltage Drop: 0.9 V
• Maximum Diode Capacitance: 0.9 pF
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 0.9 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 0.95 Ohms at 5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 715 mW
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Package Type: I-IGIA
• Mounting: Surface Mount
• Typical Carrier Life Time: 170ns
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1937-2; 934056546115; BAP65-02 T/R

NXP Semiconductors
BAP65-02
Product data sheet
Fig 1.
Fig 3.
s
(dB)
21
(1) I
(2) I
(3) I
(4) I
(5) I
(Ω)
10
−0.1
−0.2
−0.3
−0.4
−0.5
r
D
10
2
−1
10
0
1
f = 100 MHz; T
current; typical values
0
Diode inserted in series with a 50  stripline circuit and
biased via the analyzer Tee network. T
Insertion loss (s
of frequency; typical values
Forward resistance as a function of forward
−1
F
F
F
F
F
= 0.5 mA
= 1 mA
= 5 mA
= 10 mA
= 100 mA
(1)
1000
1
j
= 25 C
(2)
21
(3)

2
) of the diode as a function
(5)
(4)
2000
10
I
f (MHz)
F
All information provided in this document is subject to legal disclaimers.
(mA)
amb
mld499
mld501
= 25 C.
Rev. 5 — 28 September 2010
3000
10
2
Fig 2.
Fig 4.
(fF)
C
s
1000
(dB)
d
21
800
600
400
200
−10
−20
−30
−40
0
2
0
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
0
Diode zero biased and inserted in series with a 50 
stripline circuit. T
Isolation (s
frequency; typical values
4
j
= 25 C
1000
21

2
amb
) of the diode as a function of
8
= 25 C.
12
2000
BAP65-02
© NXP B.V. 2010. All rights reserved.
Silicon PIN diode
f (MHz)
16
V
R
mld500
mld502
(V)
3000
20
4 of 9