BAP65-02,115 NXP Semiconductors, BAP65-02,115 Datasheet - Page 3

• Manufacturer Part Number: BAP65-02,115
• Description: DIODE PIN 30V 100MA SOD-523
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP65-02,115

• Package / Case: SC-79, SOD-523
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 30V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.375pF @ 20V, 1MHz
• Resistance @ If, F: 350 mOhm @ 100mA, 100MHz
• Power Dissipation (max): 715mW
• Configuration: Single
• Reverse Voltage: 30 V
• Forward Continuous Current: 100 mA
• Termination Style: Solder Tails
• Carrier Life: 0.17 us
• Forward Voltage Drop: 0.9 V
• Maximum Diode Capacitance: 0.9 pF
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 0.9 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 0.95 Ohms at 5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 715 mW
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Package Type: I-IGIA
• Mounting: Surface Mount
• Typical Carrier Life Time: 170ns
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1937-2; 934056546115; BAP65-02 T/R

NXP Semiconductors
Table 6.
T
[1]
BAP65-02
Product data sheet
Symbol
s
s

L
j
L
S
21
21
= 25


2
2
Guaranteed on AQL basis: inspection level S4, AQL 1.0.

C unless otherwise specified.
Characteristics
Parameter
insertion loss
insertion loss
charge carrier life time
series inductance
…continued
All information provided in this document is subject to legal disclaimers.
when switched from
R
Conditions
I
I
I
I
I
f = 1800 MHz
I
f = 2450 MHz
I
I
I
Rev. 5 — 28 September 2010
F
F
F
F
F
F
F
R
F
L
= 10 mA; f = 900 MHz
= 10 mA; f = 1800 MHz
= 10 mA; f = 2450 MHz
= 100 mA; f = 900 MHz
= 100 mA;
= 100 mA;
= 10 mA to I
= 100 mA; f = 100 MHz
= 3 mA
= 100 ; measured at
R
= 6 mA;
Min
-
-
-
-
-
-
-
-
0.07
0.1
0.13
0.07
0.6
Typ
0.1
0.128
0.17
BAP65-02
© NXP B.V. 2010. All rights reserved.
Silicon PIN diode
Max
-
-
-
-
-
-
-
-
dB
dB
dB
dB
nH
Unit
dB
dB
s
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