NTF6P02T3G ON Semiconductor, NTF6P02T3G Datasheet - Page 2

• Manufacturer Part Number: NTF6P02T3G
• Description: MOSFET P-CH 20V 10A SOT223
• Manufacturer: ON Semiconductor

Specifications of NTF6P02T3G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1200pF @ 16V
• Power - Max: 8.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.044 Ohms
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: - 10 A
• Power Dissipation: 8.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTF6P02T3GOS; NTF6P02T3GOS; NTF6P02T3GOSTR

4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
5. Switching characteristics are independent of operating junction temperatures.
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
SOURCE−DRAIN DIODE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 4)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate Threshold Voltage (Note 4)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 4)
Forward Transconductance (Note 4)
Input Capacitance
Output Capacitance
Transfer Capacitance
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
DS
DS
GS
DS
GS
GS
GS
DS
= 0 Vdc, I
= −20 Vdc, V
= −20 Vdc, V
= ± 8.0 Vdc, V
= V
= −4.5 Vdc, I
= −2.5 Vdc, I
= −2.5 Vdc, I
= −10 Vdc, I
GS
, I
D
D
= −250 mAdc)
= −250 mAdc)
D
D
D
D
GS
GS
= −6.0 Adc)
DS
= −6.0 Adc)
= −4.0 Adc)
= −3.0 Adc)
= 0 Vdc)
= 0 Vdc, T
= 0 Vdc)
(Note 4)
Characteristic
J
= 125°C)
(Note 5)
(I
S
(I
(T
S
= −3.0 Adc, V
J
(V
(V
(V
= −3.0 Adc, V
= 25°C unless otherwise noted)
(I
(I
(V
(V
DD
DD
DS
dI
S
S
V
DS
DS
S
GS
= −2.1 Adc, V
= −3.0 Adc, V
= −5.0 Vdc, I
= −16 Vdc, I
= −16 Vdc, I
/dt = 100 A/ms) (Note 4)
= −16 Vdc, V
= −10 Vdc, V
V
V
= −4.5 Vdc) (Note 4)
GS
GS
f = 1.0 MHz)
f = 1.0 MHz)
R
R
G
G
GS
= −4.5 Vdc,
= −4.5 Vdc,
http://onsemi.com
= 6.0 W)
= 2.5 W)
GS
= 0 Vdc, T
= 0 Vdc) (Note 4)
D
D
D
GS
GS
= −6.0 Adc,
= −6.0 Adc,
= −1.0 Adc,
GS
GS
= 0 Vdc)
= 0 Vdc,
2
= 0 V,
= 0 V,
J
= 125°C)
V
Symbol
R
V
(BR)DSS
t
t
t
t
I
I
C
C
Q
DS(on)
C
C
V
GS(th)
C
C
Q
Q
d(on)
d(off)
d(on)
d(off)
DSS
GSS
g
Q
t
t
t
oss
oss
t
t
t
t
SD
rss
rss
RR
iss
iss
rr
a
b
fs
gs
gd
r
f
r
f
T
−0.4
Min
−20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.82
−0.74
−0.68
0.036
−0.7
Typ
−25
−11
900
350
940
410
110
2.6
7.0
8.0
1.7
6.0
44
57
57
12
90
25
75
50
30
60
60
15
42
17
25
−
−
−
± 100
1200
Max
−1.0
−1.0
−1.2
−10
500
150
125
50
70
12
45
85
20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
Mhos
mAdc
nAdc
Unit
Vdc
Vdc
mW
Vdc
pF
pF
nC
mC
ns
ns
ns