NTF6P02T3G ON Semiconductor, NTF6P02T3G Datasheet

NTF6P02T3G

Manufacturer Part Number

NTF6P02T3G

Description

MOSFET P-CH 20V 10A SOT223

Manufacturer

ON Semiconductor

Datasheet

1.NTF6P02T3G.pdf (6 pages)

Specifications of NTF6P02T3G

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

50 mOhm @ 6A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

10A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

20nC @ 4.5V

Input Capacitance (ciss) @ Vds

1200pF @ 16V

Power - Max

8.3W

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Configuration

Single Dual Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.044 Ohms

Forward Transconductance Gfs (max / Min)

12 S

Drain-source Breakdown Voltage

- 20 V

Gate-source Breakdown Voltage

+/- 8 V

Continuous Drain Current

- 10 A

Power Dissipation

8.3 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTF6P02T3GOS
NTF6P02T3GOS
NTF6P02T3GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTF6P02T3G

Manufacturer:

ON SEMICONDUCTOR

Quantity:

30 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTF6P02T3G

Manufacturer:

ONSEMI

Quantity:

37 555

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

NTF6P02T3G

Current page: 1 of 6
Download datasheet (139Kb)

NTF6P02T3

Power MOSFET

-10 Amps, -20 Volts

P−Channel SOT−223

Features

•

Typical Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Steady State.

2. When surface mounted to an FR4 board using 1” pad size,

3. When surface mounted to an FR4 board using minimum recommended pad

January, 2010 − Rev. 3

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Drain Current (Note 1)

Total Power Dissipation @ T

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Thermal Resistance

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

i.e.: Cellular and Cordless Telephones and PCMCIA Cards

Low R

Logic Level Gate Drive

Diode Exhibits High Speed, Soft Recovery

Avalanche Energy Specified

Pb−Free Package is Available

Power Management in Portables and Battery−Powered Products,

(Cu. Area 1.127 sq in), Steady State.

size, (Cu. Area 0.412 sq in), Steady State.

− Continuous @ T

− Single Pulse (t

Energy − Starting T

− Junction to Lead (Note 1)

− Junction to Ambient (Note 2)

− Junction to Ambient (Note 3)

L(pk)

= −10 A, L = 3.0 mH, R

= −20 Vdc, V

DS(on)

Rating

= 10 ms)

= 25°C

= 70°C

= 25°C

= −5.0 Vdc,

= 25°C unless otherwise noted)

= 25°C

= 25W)

Symbol

, T

DSS

qJA

qJL

stg

−55 to

Value

+150

±8.0

−8.4

71.4

−20

−10

−35

150

160

260

8.3

°C/W

Unit

Vdc

Adc

Apk

°C

†For information on tape and reel specifications,

NTF6P02T3

NTF6P02T3G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

CASE 318E

Device

(Note: Microdot may be in either location)

SOT−223

STYLE 3

6P02

ORDERING INFORMATION

DS(on)

http://onsemi.com

−10 AMPERES

P−Channel MOSFET

−20 VOLTS

= Assembly Location

= Year

= Work Week

= Specific Device Code

= Pb−Free Package

= 44 mW (Typ.)

(Pb−Free)

SOT−223

Package

MARKING DIAGRAM

& PIN ASSIGNMENT

Publication Order Number:

Gate

4000/Tape & Reel

6P02G

4000/Tape & Reel

Drain

AYW

Shipping

NTF6P02T3/D

Source

†

Related parts for NTF6P02T3G

NTF6P02T3G Summary of contents

Page 1

... R 15 qJL 71.4 R qJA 160 R qJA T 260 °C L NTF6P02T3 NTF6P02T3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com −10 AMPERES −20 VOLTS (Typ.) DS(on P−Channel MOSFET MARKING DIAGRAM & ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note Vdc −250 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V = −20 Vdc Vdc ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 12 −2.2 V −10 V −2.0 V −7.0 V −5 −2.4 V −3.2 V −1.8 V −4 −1 −1 −1 ...

Page 4

TYPICAL ELECTRICAL CHARACTERISTICS 3000 iss 2400 1800 C rss 1200 C iss C 600 oss C rss 0 −V − GATE−TO−SOURCE OR DRAIN−TO−SOURCE ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 1.0E-03 1.0E-02 1.0E-01 NORMALIZED TO R 0.0175 W 0.0710 W CHIP JUNCTION 0.0154 F 0.0854 F 1.0E+00 1.0E+01 t, TIME (s) Figure 11. FET ...

Page 6

... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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