IPD25CNE8N G Infineon Technologies, IPD25CNE8N G Datasheet
IPD25CNE8N G
Specifications of IPD25CNE8N G
Related parts for IPD25CNE8N G
IPD25CNE8N G Summary of contents
Page 1
... PG-TO262-3 25CNE8N 26CNE8N Symbol Conditions I T =25 ° =100 ° =25 °C D,pulse C =25 Ω = = = /dt di /dt =100 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPB26CNE8N G IPD25CNE8N mΩ IPP26CNE8N G IPU25CNE8N G PG-TO220-3 PG-TO251-3 26CNE8N 25CNE8N Value Unit 140 kV/µs ± -55 ... 175 °C 55/175/56 2010-04-28 ...
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... GS(th = DSS T =25 ° = =125 ° = GSS = = DS(on) (TO252 (TO251 (TO263 (TO220, TO262 |>2 DS(on)max = (one layer, 70 µm thick) copper area for drain page 2 IPB26CNE8N G IPD25CNE8N G Values Unit min. typ. max 2.1 K 0.1 1 µ 100 - 1 100 mΩ Ω 2010-04-28 ...
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... See figure 16 for gate charge parameter definition Rev. 1.07 IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G Symbol Conditions C iss = oss f =1 MHz C rss t d( =1.6 Ω d(off = = plateau oss =25 ° S,pulse = =25 ° = /dt =100 A/µ page 3 IPB26CNE8N G IPD25CNE8N G Values Unit min. typ. max. - 1560 2070 pF - 288 383 - 5 140 - 1 1 165 - nC 2010-04-28 ...
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... IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G 2 Drain current I =f 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 100 µ 0 [V] DS page 4 IPB26CNE8N G IPD25CNE8N G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 t [s] p single pulse 200 2010-04-28 ...
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... parameter 100 Typ. transfer characteristics I =f |>2 DS(on)max parameter Rev. 1.07 IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f 175 ° ° [V] GS page 5 IPB26CNE8N G IPD25CNE8N =25 ° 5 [A] D =25 ° [ 2010-04-28 ...
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... I 4 3.5 3 2.5 2 typ 1 100 140 180 -60 [° Forward characteristics of reverse diode I =f parameter: T 1000 100 [V] DS page 6 IPB26CNE8N G IPD25CNE8N 390 µA 39 µ 100 140 T [° °C 175 °C 175 °C, 98% 25 °C, 98% 0 0.5 1 1.5 V [V] SD 180 2 2010-04-28 ...
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... Drain-source breakdown voltage V =f BR(DSS 100 -60 - Rev. 1.07 IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G 14 Typ. gate charge V =f(Q GS parameter °C 100 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPB26CNE8N G IPD25CNE8N =35 A pulsed gate [nC] gate ate 2010-04-28 ...
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... PG-TO220-3: Outline Rev. 1.07 IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G page 8 2010-04-28 ...
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... PG-TO-263 (D²-Pak) Rev. 1.07 IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G page 9 2010-04-28 ...
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... PG-TO262-3-1 (I²PAK) Rev. 1.07 IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G page 10 2010-04-28 ...
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... PG-TO252-3: Outline Rev. 1.07 IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G page 11 2010-04-28 ...
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... PG-TO251-3: Outline Rev. 1.07 IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G page 12 2010-04-28 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.07 IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G page 13 2010-04-28 ...